Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Jean-Philippe Bourgoin

Vincent Derycke

Marcelo Goffman

Serge Palacin

Julien Borghetti

Christophe Bureau

Fran&ccedil;ois Martin

Nicolas Chimot

Sami Ameur

Brigitte Mouanda

Julienne Charlier

Jean-Michel Nunzi

Stéphane Auvray

Pascale Mordant

Arianna Filoramo

A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.

Carbon nanotube field effect transistor

A process for mask-free localized grafting of organic molecules capable of being electrically activated, onto a composite surface comprising conductive and/or semiconductive portions, by placing said organic molecules in contact with said composite surface, in which said grafting is performed electrochemically in a single step on chosen, defined areas of said conductive and/or semiconductive portions, said areas being brought to a potential higher than or equal to a threshold electrical potential determined relative to a reference electrode, said threshold electrical potential being the potential above which grafting of said organic molecules takes place.

Method for mask-free localized organic grafting on conductive or semiconductive portions of composite surfaces

The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity &#x2208;, which satisfy &#x2208;&#x3e;0.2 nm*1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.

Device for detecting/storing electromagnetic beams, method for making same, and use thereof and imager incorporating same

The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R, Rand Rare chosen in the group comprising (H, F, Cl, Br, I) with at least one of R, Rand Rbeing different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor. 

Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it

The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.

Optically-configurable nanotube or nanowire semiconductor device

Method for forming a uniform network of semiconductor islands on an insulating substrate

Growing community of inventors

Voisins Le Bretonneux, France

Jean-Philippe Bourgoin