Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat a L'energie Atomique

Centre National De La Recherche Scientifique

Université Pierre Et Marie Curie (Paris 6)

Institut National Polytechnique De Grenoble

S'tile

Université Pierre Et Marie Curie

Université De Savoie

Jean-Paul Garandet

Béatrice Drevet

Denis Camel

Nicolas Eustathopoulos

Guilhem Roux

David Pelletier

Mathieu Opprecht

Pierre Gidon

Sébastien Dubois

Jordi Veirman

Nicolas Enjalbert

Luc Federzoni

Stéphane Cros

Etienne Pihan

Anis Jouini

Mathieu Soulier

Rayisa Voytovych

Malek Benmansour

Charles Huguet

Johann Testard

Rana Israel

Nicolas Chaintreuil

Fernando Lomello

Eric Pilat

Alain Straboni

Thierry Duffar

Daniel Morvan

Florence Servant

Yannick Veschetti

Pierre Juliet

Arnaud Morlier

Nicole Alberola

Florent Tanay

Jacky Bancillon

Florent Dupont

Virginie Brize

Annalaura Fasiello

Mickaël Albaric

Dominique Sarti

Denis Chavrier

Nelly Plassat

Rafik Benrabbah

Charles Salvi

Marc Pirot

Jean-Marie Lebrun

Jean-Michel Missiaen

Céline Pascal

Jean-Daniel Penot

Valery Botton

Jean-Michel Missien

Tleuzhan Turmagambetov

Hugues Paradis

Caroline Vienne

Camille Flament

Marie-Reine Manlay

Kévyn Perlin

Romain Saddoud

Natalia Sergeeva-Chollet

Claire Audoin

Benoît Martel

Léo Sillard

Jean-daniel Penot

Method for manufacturing an aluminium alloy part by additive manufacturing that includes a step in which a layer of a mixture of powders is locally melted then solidified, wherein the mixture of powders includes: first particles that include at least 80 wt. % aluminium and up to 20 wt. % one or more additional elements, and second particles of ZrSi, the mixture of powders including 1.8 wt. % to 4 wt. % second particles.

Method for manufacturing an aluminium alloy part by additive manufacturing from a powder mixture containing ZrSiparticles

A method for manufacturing an aluminium alloy part by additive manufacturing comprising a step during which a layer of a mixture of powders is melted locally and then solidified, wherein the mixture of powders comprises: —first particles—comprising at least 80 wt % of aluminium and up to 20 wt % of one or more additional elements, and —second particles—of yttria, the volume percentage of second particles in the mixture of powders preferably ranging from 0.5% to 5%.

Method for manufacturing an aluminium alloy part by additive manufacturing and aluminium alloy part obtained according to the method

Method for manufacturing an aluminium alloy part by additive manufacturing comprising a step during which a layer of a mixture of powders is locally melted and then solidified, characterised in that the mixture of powders comprises:

Method for manufacturing an aluminium alloy part by additive manufacturing from a mixture of powders containing yttria-stabilized zirconia

A substrate characterised in that it is at least partially surface-coated with a coating containing at least one so-called 'barrier' layer having silica and one or more material(s) X selected from among SiC, Si, SiN, in which layer the amount of X varies between 25-wt. % and 50.-wt. % in relation to the total weight of the barrier layer, the barrier layer being formed by grains of one or more materials X covered at least partially in a silica shell, and the barrier layer being in direct contact with the substrate.

Substrate with low-permeability coating for the solidification of silicon

A method for manufacturing a silicon ingot having uniform phosphorus concentration. The method includes at least the steps of: (i) providing a quasi-uniform molten silicon bath containing at least phosphorus; and (ii) proceeding to the directional solidification of the silicon, wherein a speed (VI) for solidifying the silicon and a rate (JLV) of evaporation of the phosphorus at the liquid/vapor interface of the bath are controlled such that, at each moment of the directional solidification, the following equation is verified: VI=k'/(2&#x2212;k) (E), wherein k&#x2032; is the phosphorus transfer coefficient, and k is the distribution coefficient of the phosphorus in the silicon. Also relates to a silicon ingot having uniform phosphorus concentration across a height of at least 20 cm.

Method for manufacturing a silicon ingot having uniform phosphorus concentration

A substrate, in particular intended for contact with liquid silicon, wherein it is at least partially surface-coated with a multilayer coating formed by: at least one layer, known as the adhesion layer, contiguous with the substrate, having an open porosity of at least 30%, and formed of a material comprising silica and silicon nitride, said material having a silica content of between 10 wt.-% and 55 wt.-% in relation to the total weight thereof; and a layer different from the adhesion layer, known as the release layer, located on the surface of the adhesion layer and formed of a material including silica and silicon nitride, said material having a silica content of between 2 wt.-% and 10 wt.-% in relation to the total weight thereof.

Substrate for solidifying a silicon ingot

The crystallization system includes a crucible provided with a bottom and with side walls designed to contain the material to be solidified and a device for creating a main thermal gradient inside the crucible in a perpendicular direction to the bottom of the crucible. An additional inductive heating device is arranged at the level of the side walls of the crucible facing the liquid material and without overlapping with the solid phase. This additional inductive heating device is configured to heat a part of the crystalline material located in the vicinity of the triple contact line between the liquid material, the solidified material and the crucible so that the interface between the liquid material and the solidified material forms a convex meniscus in the vicinity of the triple contact line.

System for manufacturing a crystalline material by directional crystallization provided with an additional lateral heat source

A device for analyzing at least one oxidizable molten metal using a LIBS technique, including: a LIBS analyzer; a mechanical rotary mechanism stirring a liquid bath of the at least one oxidizable molten metal, and including a central section, to be positioned above the liquid bath of the at least one oxidizable molten metal, including an internal cavity forming an analysis chamber, the central section including a first end connected to the LIBS analyzer, and a plurality of mechanical stirring paddles to be partially submerged in the liquid bath of the at least one oxidizable molten metal and that are connected to a second end of the central section opposite the first end of the central section, the LIBS analyzer configured to allow the surface of the at least one oxidizable molten metal located in the portion plumb with the internal cavity of the central portion to be analyzed.

Device for analysing an oxidisable molten metal using a libs technique

The present invention relates to a method for manufacturing a monolithic silicon wafer () comprising multiple vertical junctions () having an alternation of n-doped areas and p-doped areas, including at least the steps of: (i) providing a liquid bath () including silicon, at least one n-type doping agent and at least one p-type doping agent; (ii) proceeding to directionally solidify the silicon in a direction (I), varying the convection-diffusion parameters thereof in order to alternate the growth of n-doped silicon layers () and p-doped silicon layers (); and (iii) cutting a slice (), parallel to the direction (I), of the multi-layer structure obtained at the end of the step (ii), such as to obtain said expected wafer ().

Method for manufacturing a monolithic silicon wafer comprising multiple vertical junctions

A method for preparing silicon substrate having average crystallite size greater than or equal to 20 &#x3bc;m, including at least the steps of: (i) providing polycrystalline silicon substrate of which average grain size is less than or equal to 10 &#x3bc;m; (ii) subjecting substrate to overall homogeneous plastic deformation, at temperature of at least 1000&#xb0; C.; (iii) subjecting substrate to localized plastic deformation in plurality of areas of substrate, called external stress areas, spacing between two consecutive areas being at least 20 &#x3bc;m, local deformation of substrate being strictly greater than overall deformation carried out in step (ii); step (iii) being able to be carried out subsequent to or simultaneous to step (ii); and (iv) subjecting substrate obtained in step (iii) to recrystallization heat treatment in solid phase, at temperature strictly greater than temperature used in step (ii), in order to obtain desired substrate.

Method for preparing a recrystallised silicon substrate with large crystallites

A multilayer structure including a substrate and a first stack of a layer of SiOand a layer of material of the SiONHtype positioned between the substrate and the layer of SiO, in which the layer of SiOand the layer of material of the SiONHtype have thicknesses (e, e) such that the thickness of the layer of SiOis less than or equal to 60 nm, the thickness of the layer of material of the SiONHtype (e) is more than twice the thickness (e) of the layer of SiO, and the sum of the thicknesses of the layer of SiOand of the layer of material of the SiONHtype is between 100 nm and 500 nm, and in which z is strictly less than the ratio (x+y)/5, and advantageously z is strictly less than the ratio (x+y)/10.

Multilayer structure offering improved impermeability to gases

A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to generate charge carriers in the photovoltaic solar cell. The device is further provided with a tank designed to be filled by a liquid, and the support is configured to place the photovoltaic solar cell in the liquid.

Device and method for restoring silicon-based photovoltaic solar cells

The restoration device of least one silicon-based photovoltaic solar cell includes a support of the cell, a heat source configured to heat the photovoltaic solar cell, and unit for generating charge carriers in the cell. To better accelerate the restoration kinetics of the solar cell, the device includes an ultrasonic transducer designed to generate ultrasonic waves propagating in the photovoltaic solar cell.

Device and method for restoring silicon-based solar cells using an ultrasound transducer

The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 &#x3bc;m, including: providing a layer of crystallized silicon the surface of which, being inhomogeneous in terms of the size of the crystallites, is made up of large crystallites with a size no lower than 20 &#x3bc;m, and small crystallites of a smaller size; forming, on the surface of the inhomogeneous silicon layer, a layer of at least one non-nucleating material for the silicon, the thickness of which is adjusted such to cover the entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of a silicon layer on the surface of the assembly obtained at the end of step, under conditions that are suitable for forming the expected epitactic layer.

Method for forming an epitactic silicon layer

The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 &#x3bc;m, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 &#x3bc;m; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410&#xb0; C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.

Method for preparing a coarse-grain crystallized silicon layer

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Jean-Paul Garandet