Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Jean-Paul Chamonal

Clément Lobre

Johan Rothman

Jean-Louis Pornin

Roch Espiau De Lamaestre

Giacomo Badano

Michel Ravetto

Francedillaois Marion

François Boulard

A method for manufacturing a photodetection device, which includes the following steps:

Process for manufacturing a low-noise photodetector device in a CdHgTe substrate

The invention pertains to a process for producing an array () of mesa-structured photodiodes (), including at least the following steps: a) producing a useful layer (); b) producing an etch mask formed of a plurality of etch pads (); c) wet-etching part of the useful layer () located between the etch pads (), forming a plurality of mesa-structured photodiodes (), producing a recess (); d) conformally depositing a passivation layer (); e) removing the etch pads () by chemical dissolution; f) producing conductive pads ().

Process for producing an array of mesa-structured photodiodes

A photodetector with internal gain comprising a semiconductor structure in which impact ionization events are produced mostly by minority charge carriers; a first biasing contact and a second biasing contact located in the semiconductor structure; a means of defining, in the semiconductor structure, a photon collection region close to first biasing contact; a P-N type junction formed in the semiconductor structure between the two biasing contacts and close to the second biasing contact; and a collector contact which is located in the P-N junction and used to collect current in the P-N junction.

Photodetector with internal gain and detector comprising an array of such photodetectors

Process for the exchange of a detection module hybridized by welding

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Saint Ismier, France

Jean-Paul Chamonal