Commissariat a L'energie Atomique

Agence Nationale De Valorisation De La Recherche (anvar)

Jean Marine

Bernard Schaub

Daniel Bensahel

Michel Ravetto

Bernard Pelliciari

Jean Gallet

Huguette Rodot

A layer of thickness x.sub.j is formed at the surface of a wafer of p-type ZnTe semiconductor material and compensated so as to provide insulation with high resistivity. Ions are implanted with sufficient energy to form a trapping region of thickness x.sub.1 at the surface of the semiconductor and to form beneath the trapping region an insulating region of thickness x.sub.3, with x.sub.1 &lt;x.sub.j. The diode has high efficiency both for emission of light having well-defined wavelengths and for current generation when subjected to light radiation.

Method of fabrication of electroluminescent and photodetecting diodes

Method for the manufacture of light emitting and/or photodetective diodes, wherein it comprises the following operations:

Method for the manufacture of light emitting and/or photodetective diodes

A method of preparation of a ternary or quaternary alloy composed of the elements A.sup.1 A.sup.2 A.sup.3 (ternary alloy) or the elements A.sup.1 A.sup.2 A.sup.3 A.sup.4 (quaternary alloy) consists of the successive steps of preparation of one or a number of binary alloys such as A.sup.1 A.sup.2, purification of the binary alloys by zone melting, placing of the binary alloy or alloys which are in the solid state together with the other constituent elements of the alloy within a container in the presence of a solvent, crystallization of the ternary or quaternary alloy by melting all the elements within the container and recrystallization in the presence of the solvent.

Method of preparation of semiconducting compounds

A wafer of the semiconducting compound ZnTe is subjected to at least one bombardment by a magnesium ion flux, the energy and density of the bombardment or bombardments being such as to obtain a desired concentration of magnesium ions in the portion of the semiconductor to be doped and this is followed by a thermal annealing operation, the concentration of magnesium being such as to obtain an alloy having the formula Mg.sub.X Zn.sub.1.sub.-X Te with 0&lt;X&lt;1.

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Grenoble, France

Jean Marine