International Business Machines Corporation

S.o.i.tec Silicon on Insulator Technologies

Jean Marc Waechter

Patrick Raffin

Vivien Renauld

Fabrice Delarue

Christophe Balsan

Joel Journe

The invention provides methods for reducing trap densities at interfaces in a multilayer semiconductor wafer, specifically trap densities between an active layer and an insulating layer under the active layer. The methods comprise exposing wafers to high temperatures in a generally neutral atmosphere that also comprises one or more species that can, or whose ions can, migrate into the wafer down to the interface where reduction of the trap density is desired.

Method for reducing the trap density in a semiconductor wafer

There is disclosed a high throughput multideposition SACVD reactor that enables the rapid thermal deposition of dielectric materials such as Si N , SiO , and SiON and non-dielectric materials such as polysilicon onto a semiconductor substrate in the same chamber according to the desired sequence. Such a reactor has a processing chamber which is well adapted to single semiconductor wafer processing. The processing chamber includes an improved susceptor to support the wafer and a specific gas distribution system adapted to supply the different gases used in the deposition process and for cleaning. The improved susceptor consists of a standard carbon plate coated with a polysilicon film to protect it against said cleaning gases when they are aggressive to carbon. The present invention also encompasses a method of fabricating said improved susceptor.

Multideposition SACVD reactor

Growing community of inventors

Saint Vincent de Mercuze, France

Jean Marc Waechter