International Business Machines Corporation

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Jean-Marc Rousseau

Rajarao Jammy

Patrick Raffin

Francis Rodier

Johnathan E Faltermeier

Joseph Francis Shepard, Jr

Susan E Chaloux

Caroline Aussilhou

Corinne Buchet

Ryota Katsumata

Helmut Horst Tews

Bernhard Sell

Keitaro Imai

Viraj Yashawant Sardesai

Ulrike Gruening

Paul Christian Parries

Matthias Goldbach

Harald Seidl

Christopher Carr Parks

Paul Andrew Ronsheim

Uwe Schroeder

Irene Lennox McStay

Dirk Schumann

Heidi L Greer

Mathias Bostelmann

Corine Bucher

Manfred Hauf

Semiconductor devices having deep trenches with fill material therein having low resistivity are provided along with methods of fabricating such semiconductor devices.

Low resistivity deep trench fill for DRAM and EDRAM applications

Doped structures containing diffusion barriers

There is disclosed a method of forming a buried strap (BS) and its quantum conducting barrier (QCB) in a structure wherein a doped polycrystalline silicon region is exposed at the bottom of a recess and separated from a monocrystalline region of a silicon substrate by a region of an insulating material. First, a thin continuous layer of undoped amorphous silicon is deposited by LPCVD to coat said regions. The surface of this layer is nitridized to produce a Si N QCB film. Now, at least one dual layer comprised of an undoped amorphous silicon layer and a dopant monolayer is deposited onto the structure by LPCVD. The recess is filled with undoped amorphous silicon to terminate the buried strap and its QCB. Finally, the structure is heated to activate the dopants in the buried strap to allow an electrical continuity between said polycrystalline and monocrystalline regions through the QCB by a quantum mechanical effect. All these steps are performed in situ in the same LPCVD tool.

Methods of forming the buried strap and its quantum barrier in deep trench cell capacitors

A multilayered quantum conducting barrier (MQCB) structure formed on two semiconductor regions having a different crystalline nature and a thin layer of an insulating material sandwiched between said semiconductor regions. An undoped amorphous silicon layer continuously coats these two semiconductor regions and insulating layer. The surface of the undoped amorphous silicon layer is nitridized to produce a superficial film of a nitride based material to form the desired quantum conducting barrier (QCB). A stack consisting of at least one dual layer comprised of a bottom undoped amorphous silicon layer and a top dopant monolayer is formed on said undoped amorphous silicon layer. After thermal processing, the MQCB structure operates as a strap allowing an electrical continuity between these semiconductor regions through the QCB by a quantum mechanical effect.

Multilayered quantum conducting barrier structures

Improved reliability structures containing quantum conductive barrier layer structures are obtained by employing quantum conductive layers in combination with thin regions of amorphous or microcrystalline semiconductor material. The quantum conductive structures are especially useful when incorporated into trench capacitors to reduce or eliminate the occurrence of low temperature fails and single cell fails in DRAM circuits.

Structures containing quantum conductive barrier layers

A low-temperature process for forming a highly conformal barrier film during integrated circuit manufacture by low pressure chemical vapor deposition (LPCVD). The process includes the following steps. First, the process provides ammonia and a silicon-containing gas selected from the group consisting of silane, dichlorosilane, bistertiarybutylaminosilanc, hexachlorodisilane, and mixtures of those compositions. The ratio of the volume of ammonia to the volume of the silicon-containing gas is adjusted to yield silicon concentrations greater than 43 atomic percent in the resultant film. The process applies a deposition temperature of 550&deg; C. to 720&deg; C. The ammonia and the silicon-containing gas are reacted at the deposition temperature to form a silicon-rich nitride film less than 200 &angst; thick. Finally, the silicon nitride film is deposited by low pressure chemical vapor deposition.

Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability

Growing community of inventors

Mennecy, France

Jean-Marc Rousseau