International Business Machines Corporation

Jean-Marc Halbout

Subramanian Srikanteswara Iyer

Ernest Bassous

Michael R Scheuermann

Vijay P Kesan

Mark B Ketchen

Rajiv V Joshi

Paul Andrew Moskowitz

George L Chiu

Daniel R Grischkowsky

Eugene Shapiro

Herbert P Byrnes

Edward Plavchak

Joel Penfield Read

George V Treyz

Thomas J Kramer

Massimo A Ghioni

Stephen T Huhn

Daniel J Mathias, Jr

Richard F Miskovitz

Irl N Duling, Iii

A server support matrix system and method for measuring and pricing information technology services provided by small, midrange and large servers. The inventive system and method assigns capacity units to server systems based on size and applies the capacity units to categorize server systems for valuation. In addition, the inventive system and method provides for taking into account server application complexity, in the assignment of a usage type category, and different levels of support services which can be provided by the service provider. The variables of capacity unit, usage type and support service level are combined in a Server Support Matrix and are assigned costs based on their location in the matrix. The matrix allows service providers and customers to readily ascertain prospective charges and to project costs for next-generation servers.

System and method for measuring and pricing midrange computer server outsourcing services

Silicon-VLSI-compatible photodetectors, in the form of a metal-semiconductor-metal photodetector (MSM-PD) or a lateral p-i-n photodetector (LPIN-PD), are disclosed embodying interdigitated metallic electrodes on a silicon surface. The electrodes of the MSM-PD have a moderate to high electron and hole barrier height to silicon, for forming the Schottky barriers, and are fabricated so as to be recessed in the surface semiconducting layer of silicon through the use of self-aligned metallization either by selective deposition or by selective reaction and etching, in a manner similar to the SALICIDE concept. Fabrication is begun by coating the exposed Si surface of a substrate with a transparent oxide film, such that the Si/oxide interface exhibits low surface recombination velocity. The interdigitated pattern is then etched through the oxide film by lithography to expose the Si surface and metallic electrode members are formed selectively in the exposed Si surface, using self-aligned metallization to produce thin interdigitated electrodes recessed below the silicon surface, which itself may be on a comparatively thin Si layer. The electrodes may be spaced to minimize the interdigital carrier transit time and maximize the sensitivity and the entire process and structure are compatible with conventional silicon integrated circuit (IC) technology. A further feature involves isolating the semiconductor surface layer from the substrate by a layer that may be either 1) transparent and insulating, 2) optically absorbing, or 3) optically reflecting, so that the photocarriers recombine before they can be collected by the field. In the latter case, the photodetector acts as a resonant cavity, resulting in an increase in the number of carriers that are generated, and hence a more sensitive device.

High speed silicon-based lateral junction photodetectors having recessed

A system for making porous silicon on blank and patterned Si substrates by 'immersion scanning', particularly suitable for fabricating light-emitting Si devices and utilizing an open electrolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation. The light-emitting silicon devices produced incorporate porous silicon layers and are operable at room temperature.

Immersion scanning system for fabricating porous silicon films

A system for making porous silicon on blank and patterned Si substrates by 'immersion scanning', particularly suitable for fabricating light-emitting Si devices and utilizing an open electolytic cell having a cathode and an opposing anode consisting of a Si substrate on which the porous silicon is to be formed, both disposed, with their opposing surfaces in parallel, in an aqueous HF solution electrolyte contained in the cell. The substrate anode is mounted to be movable relative to the electrolyte so as to be mechanically cycled or scanned in and out of the electrolyte at a programmable rate during anodization. The uniformity, thickness and porosity of the resulting anodized layer on the substrate are determined by the scanning speed, number of cycles, current density, and HF-based electrolyte parameters of the system, and the Si substrate resistivity, conductivity type, and crystal orientation. The light-emitting silicon devices produced incorporate porous silicon layers and are operable at room temperature.

Apparatus for producing porous silicon on a substrate

A method and apparatus for selecting an optical wavelength is provided incorporating a layer of silicon with two juxtaposed partially-reflective mirrors to provide a Fabry-Perot cavity and ohmic contacts to the silicon layer for heating the silicon layer to provide a temperature change to change its index of refraction. The invention overcomes the problem of mechanically tuning a Fabry-Perot cavity for wavelength division multiplexing (WDM).

Optical wavelength demultiplexing filter for passing a selected one of a

A thin interface pellicle probe for making temporary or permanent interconnections to pads or bumps on a semiconductor device wherein the pads or bumps may be arranged in high density patterns is described incorporating an electrode for each pad or bump wherein the electrode has a raised portion thereon for penetrating the surface of the pad or bump to create sidewalls to provide a clean contact surface and the electrode has a recessed surface to limit the penetration of the raised portion. The electrodes may be affixed to a thin flexible membrane to permit each contact to have independent movement over a limited distance and of a limited rotation. The invention overcomes the problem of making easily breakable electrical interconnections to high density arrays of pads or bumps on integrated circuit structures for testing, burn-in or package interconnect and testing applications.

Thin interface pellicle for dense arrays of electrical interconnects

A communication system for transmitting and receiving terahertz signals has a emitter employing a resonant radiating structure connected to an ultrafast switch. The switch is a subpicosecond photoconducting switch coupled to a coplanar transmission line having a pair of approximately 1 micron wide A1 lines deposited on an SOS substrate. The transmission line is separated from the tip of the radiating structure by a photoconducting gap forming the switch and is driven by a laser pulse. Utilizing the gap excitation principle, the transmitting antenna radiates a freely propagating signal that may be received by an identical structure either on the same or on different substrates.

Integrated terahertz electromagnetic wave system

Stroboscopic voltage measurements are effected within a short time window with very high spatial resolution using a tunneling microscope. Sampling the tunneling current is implemented by modulating the distance between the tunneling tip and a conductor which carries the waveform to be sampled. In one embodiment, the tunneling tip is mounted on a crystal oscillator to modulate the separation between the tunneling tip and the conductor. As an alternative, an acoustic modulator is used to produce mechanical motion in the surface of the sample in order to modulate the distance between the sample and the tunneling tip.

High speed waveform sampling with a tunneling microscope

A testing or sampling probe to determine the response of electrical circuits or devices to ultrafast electrical pulses. The probe is detachable from the device being tested. The probe includes a transparent substrate though which optical pulses are focused or directed onto a photoconducting gap. The probe further includes a transmission line associated with the photoconductive gap, and which terminates at a tapered end of the probe in contacts which are placed on the device under test.

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Larchmont, NY, United States of America

Jean-Marc Halbout