L'air Liquide,societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

American Air Liquide, Inc.

L'air Liquide, Societe Anonyme a Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude

L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

Air Liquide Electronics U.S. LP

Air Liquide Advanced Materials, Inc.

Other

Denka Company Limtied

Jean-Marc Girard

Nicolas Blasco

Antonio Sanchez

Peng Zhang

Manish Khandelwal

Gennadiy Itov

Satoko Gatineau

Christian Dussarrat

Zhiwen Wan

Reno Pesaresi

Julien Gatineau

Yumin Liu

Grigory Nikiforov

Sean Kerrigan

Wontae Noh

Glenn Kuchenbeiser

Feng Li

Daehyeon Kim

Matthew Damien Stephens

Guillaume Husson

Yves Marot

Alain Mail

David Orban

Cole Ritter

Venkateswara R Pallem

Ziyun Wang

Jooho Lee

Yang Wang

Changhee Ko

Claudia Fafard

Sonia Plaza

Clément Lansalot-Matras

Ashutosh Misra

Takako Kimura

Rocio Alejandra Arteaga Muller

Raphael Rochat

Stefan Wiese

Naoto Noda

Vincent M Omarjee

James J McAndrew

Andrey V Korolev

Fabrizio Marchegiani

Mikiko Kimura

Larry Kit-wing Leung

Santiago Marques-Gonzalez

Akinobu Nasu

Ivan Oshchepkov

Yuusuke Sato

Daniel Gary

Masahiro Suzuki

Ravi Kumar Laxman

Jean-Christophe Rostaing

Kazutaka Yanagita

Naoki Tamaoki

Julien Lieffrig

Benjamin Jurcik

James J F McAndrew

Audrey Pinchart

Hana Ishii

Matthew L Fisher

Kohei Tarutani

Shingo Okubo

Christophe Lachaud

Andreas Zauner

Takahiro Kozuka

Hiroyuki Yashima

Masao Kimura

Eri Tsukada

Sunao Kamimura

Patrick Mauvais

Naohisa Nakagawa

Masato Hirai

Keishi Yamamoto

Zhengning Gao

Takio Kizu

Seiichi Terasaki

Valère Laurent

Bin Sui

Ashulosh Misra

Guillaume Rameau

Olivier Letessier

Jean-Marie Friedt

Fan Qin

Thomas J Larrabee

Bertrand Lefevre

Eric Duchateau

Jean Friedt

Benjamin J Jurcik

M&eacute;lanie Bartolomey

Rocio Arteaga

Ravi Laxman

A genus of rare earth containing chemicals is disclosed. These rare earth containing chemicals are suitable for use in sequential vapor deposition processes to form rare earth fluoride or rare earth oxyfluoride films. Such films may be used to protect materials and devices from corrosive chemicals.

Devices having a rare earth (oxy) fluoride coating for improved resistance to corrosive chemical environments and methods for making and using these devices

Methods for forming a Si-containing film on a substrate comprise heating the substrate to a temperature higher than S50° C., exposing the substrate to a vapor including a Si-containing film forming composition containing a Si-containing precursor having the formula: SiRR(NH—SiR'), wherein x=2, 3, 4; y=0, 1, 2, Rand Reach are independently selected from H, a halogen (Cl, Br, I), an C-Calkyl, an isocyanate, a C-Calkoxide, or an —NRRgroup in which Rand Reach are independently selected from H, a C-Calkyl, provided that if R═H, R>C; each R′ is independently selected from H, a halogen (Cl, Br, I), or a C-Calkyl, and depositing the Si-containing precursor onto the substrate to form the Si-containing film on the substrate through an ALD process. The Si-containing precursor may be selected from SiH(NH—Si(CH)), SiHCl(NH—Si(CH)), SiCl(NH—Si(CH)), SiH(NH—Si(CH)), SiCl(NH—Si(CH)), or Si(NH—Si(CH)).

Precursors and processes for deposition of Si-containing films using ALD at temperature of 550° C. or higher

Disclosed is a SAM forming composition comprising a SAM monomer or precursor having a backbone with a surface reactive group, wherein the backbone contains no Si—C bonds and is selected from the group consisting of a Si—C bond-free polysilane and a trisilylamine. The surface reactive groups are disclosed for the surface to be covered being a dielectric surface and a metal surface, respectively. A process of forming a SAM on a surface and a process of forming a film on the SAM are also disclosed.

Silicon-based self-assembling monolayer compositions and surface preparation using the same

Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.

Group 6 transition metal-containing compositions for vapor deposition of group 6 transition metal-containing films

A process for gas phase deposition of a metal or metal nitride film on a surface substrate comprises: reacting a metal-oxo or metal oxyhalide precursor with an oxophilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor, and forming the metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxophilic reagent simultaneously or sequentially. The substrate is exposed to a reducing agent sequentially after deoxygenation.

Reagents to remove oxygen from metal oxyhalide precursors in thin film deposition processes

Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formula(SiH(NR)X)N(SiHX),wherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n&#x2265;1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR']; further wherein each R&#x2032; of the [SiR&#x2032;] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [&#x2014;NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d&#x2260;0; or d=0, c&#x2260;0.

Si-containing film forming precursors and methods of using the same

A preprocessing method comprises a sintering step of heating a solid material container filled with a solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and crystallizing at least part of the solid material, and an impurity removal step of heating the solid material container filled with the solid material using a temperature which is lower than either the melting point or sublimation of the solid material, whichever is lower, and removing at least part of the impurities included in the solid material.

Preprocessing method for solid material, and solid material product filled with solid material manufactured using said solid material preprocessing method

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N&#x2014;H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N&#x2014;H free repeating units having the formula [&#x2014;N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Perhydropolysilazane compositions and methods for forming oxide films using same

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N&#x2014;SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

A process of conditioning tungsten pentachloride to form specific crystalline phases are disclosed. The specific crystalline phases permit stable vapor pressures over extended periods of time during vapor deposition and etching processes.

Tungsten pentachloride conditioning and crystalline phase manipulation

Disclosed are silicon and carbon containing film forming compositions comprising a polycarbosilazane polymer or oligomer formulation that consists of silazane-bridged carbosilane monomers, the carbosilane containing at least two &#x2014;SiH&#x2014; moieties, either as terminal groups (&#x2014;SiHR) or embedded in a carbosilane cyclic compound, wherein R is H, a C-Clinear, branched, or cyclic alkyl- group, a C-Clinear, branched, or cyclic alkenyl- group, or combination thereof. Also disclosed are methods of forming a silicon and carbon containing film comprising forming a solution comprising a polycarbosilazane polymer or oligomer formulation and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to form the silicon and carbon containing film.

Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane

Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250&#xb0; C.

Ultra-low temperature ALD to form high-quality Si-containing film

Si-containing film forming compositions are disclosed comprising a precursor having the formula [&#x2014;NR&#x2014;RRSi&#x2014;(CH)&#x2014;SiRR&#x2014;]wherein n=2 to 400; R, R, R, R, and Rare independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R, R, R, and Ris H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary pre-cursors include, but are not limited to, [&#x2014;NH&#x2014;SiH&#x2014;CH&#x2014;SiH&#x2014;], and [&#x2014;N(SiH&#x2014;CH&#x2014;SiH)&#x2014;SiH&#x2014;CH&#x2014;SiH&#x2014;].

Si-containing film forming compositions and methods of making and using the same

Processes of selectively depositing a metal-containing film comprise: providing a surface having a plurality of materials exposed thereon simultaneously, and exposing the surface to a vapor of a metal-containing film-forming composition that contains a precursor having the formula:LM(&#x2014;N(R)&#x2014;(CR')&#x2014;NR&#x2033;)wherein M is a Group 12, Group 13, Group 14, Group 15, Group IV or Group V element; x+1 is the oxidation state of the M; L is an anionic ligand, independently selected from dialkylamine, alkoxy, alkylimine, bis(trialkylsilylamine), amidinate, betadiketonate, keto-imine, halide, or the like; R, R&#x2033; each are independently a C-Clinear, branched or cyclic alkyl, alkenyl, or trialkylsilyl group; R&#x2032; is H or a C-Clinear, branched or cyclic alkyl, alkenyl or trialkylsilyl group; n=1-4,wherein at least one of the materials is at least partially blocked by a blocking agent from the deposition of the metal-containing film through a vapor deposition process.

Area selective deposition of metal containing films

Selective reduction methods for halogenated carbosilanes and carbodisilanes are disclosed. More particularly, high yields of the desired carbosilanes and carbodisilanes are obtained by reduction of their halogenated counterparts using a reducing agent and tetrabutylphosphonium chloride (TBPC) as a catalyst.

Catalytic reduction of halogenated carbosilanes and halogenated carbodisilanes

Growing community of inventors

Versailles, France

Jean-Marc Girard