Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Alcatel Lucent

Université Paris-sud 11

Ecole Centrale De Lyon

Memscap

Silmag

Memscap S.a.

Imec

Universiteit Gent

Institut National Des Sciences Appliquees

Jean-Marc Fedeli

Joel Magnin

Hubert Jouve

Badhise Ben Bakir

Line Vieux-Rochaz

Robert Cuchet

Jean Mouchot

Pedro Rojo-Romeo

Serge Valette

Jean-Michel Hartmann

Christophe Kopp

Marc Rabarot

Christian Pisella

Maryse Fournier

Marie-Therese Delaye

Yann Bogumilowicz

Stephane Renard

Nicolas Olivier

Hubert Moriceau

Salim Boutami

Laurent Grenouillet

Laurent Duraffourg

Sylvie Menezo

Serge Gidon

Henri Sibuet

Lea Di Cioccio

Sebastien Hentz

Pierre Labeye

Alexei Tchelnokov

Vincent Reboud

Mathieu Dupoy

Günther Roelkens

Dries Van Thourhout

Robert Poujois

Pierre Gaud

Denis Duret

Mickaël Brun

Christine Louis

Marie-Helene Vaudaine

Daniel Mauduit

Regis Orobtchouk

Jean Baptiste Albertini

Mokhtar Boshra-Riad

Fabien Mandorlo

Guang-Hua Duan

Vincent Agache

Gerard Barrois

Laurent Vivien

Christian Seassal

Philippe Regreny

Michel Poirier

Delphine Marris-Morini

Gilles Rasigade

Pierre Brianceau

Marcel Dominiak

Thomas Magis

Antoine Descos

Philippe Pougnet

Miguel Saro

Leopold Virot

Alexis Abraham

Xavier Letartre

Bertrand Guillon

Ségolène Olivier

Marcel Audoin

Franck Boileau

Liu Liu

Maryse Vabre

Patrick Mas

Viviane Muffato

C&eacute;line Germain

Loubna El Melhaoui

Emmanuel Jordana

Melissa Ziebell

Cecile Delacour

Ségoléne Olivier

Régis Orobtchouk

Cécile Delacour

A method for forming a Bragg reflector includes after forming first trenches in the stack, which are intended to form structures of the distributed Bragg reflector, forming a sacrificial interlayer at least in the first trenches, depositing a second masking layer at least inside the first trenches, forming second trenches intended to form sidewalls of the laser, removing the second masking layer from inside the first trenches, removing said sacrificial interlayer so as to remove, by lift-off, residues of the second masking layer that remain inside the first trenches, and filling said first trenches with at least one metal material.

Method of making a distributed Bragg mirror

A method for producing a waveguide including a germanium-based core and a cladding is provided, the method including a step of 'low temperature' depositing of a shell after forming the core by engraving, such that the deposition temperature is less than 780&#xb0; C., followed by a step of 'high temperature' depositing of a thick encapsulation layer. The shell and the encapsulation layer at least partially form the cladding of the waveguide. Optionally, a step of annealing under hydrogen at a &#x201c;low temperature&#x201d;, less than 750&#xb0; C., precedes the deposition of the shell. These &#x201c;low temperature&#x201d; annealing and depositing steps advantageously make it possible to avoid a post-engraving alteration of the free surfaces of the core during the forming of the cladding which is less germanium-rich.

Method for producing Ge-core based waveguides

A measuring device includes a first light source for emitting an excitation beam at an excitation wavelength; and an excitation optical cavity, optically resonant at the excitation wavelength, and arranged such that it receives the excitation beam; a second light source for emitting a measurement beam at a measurement wavelength; and a mechanical element mounted such that it can move about an elastic recovery position and/or such that it is elastically deformable, located both on the optical path of the excitation beam in the excitation optical cavity and on the optical path of the measurement beam, and capable of being displaced and/or deformed by the excitation beam. One of either the excitation beam or the measurement beam is capable of causing the movable and/or deformable mechanical element to oscillate. The measuring device can in particular be used as a gas sensor or as a mass spectrometer.

Measuring device based on an optical measurement in an opto-mechanical cavity

A particle detector is provided, including at least one channel configured to receive at least one fluid including particles; one optical inlet configured to receive at least one incident luminous radiation; one first plurality of reflecting surfaces arranged between the optical inlet and the channel; one matrix of photo detectors arranged facing the channel; and one second plurality of reflecting surfaces arranged between the channel and the matrix of photo detectors such that the channel is disposed between the first and the second pluralities of reflecting surfaces.

Optical particle detector

The invention is an electromechanical resonator, comprising a fixed portion and an oscillator oscillating at a resonant frequency and comprising a fluidic channel. The channel defines a fluidic circuit, can receive a fluid, and can be deformed at the resonant frequency. The resonator includes a waveguide, defining a photonic circuit, guiding a light wave between an input and an output of the waveguide and being able to be deformed at the resonant frequency. The waveguide input can be connected to a light source and the waveguide output can be connected to a photodetector able to form a signal representative of the light wave propagated by the waveguide towards the photodetector, the light wave being modulated at a frequency dependent on the resonant frequency. A variation in a mass of the fluid, inducing a variation in the resonant frequency, may be detected via the signal formed by the photodetector.

Optical and electromechanical resonator

A method of manufacturing an optical waveguide with a vertical slot including the steps of a) providing a substrate successively including an electric insulator layer and a crystalline semiconductor layer, b) forming a trench on the semiconductor layer to expose the electric insulator layer and defining first and second semiconductor areas on either side, step b) being executed so that the first semiconductor area has a lateral edge extending across the entire thickness of the semiconductor layer, c) forming the dielectric layer having the predetermined width across the entire thickness of the lateral edge, the method being remarkable in that the trench formed at step b) is configured so that the second semiconductor area forms a seed layer.

Optical waveguide manufacturing method

Fabrication of a photodetector is performed on a substrate comprising a first portion successively provided with a first semiconductor film, an electrically insulating layer, a second semiconductor film, and a protection layer. The substrate also comprises a second portion not comprising the second semiconductor film. It further comprises a third portion not comprising the second semiconductor film and the protection layer. The second semiconductor film is etched in the first portion to form a cavity. A PIN/NIP diode is formed in the third portion at least by means of deposition of a third semiconductor material which also comes and fills the cavity. A conversion layer is deposited to absorb a light signal originating from the second semiconductor film and to convert the light signal into an electric signal, the conversion layer electrically connecting the PIN/NIP diode.

Method for fabricating a photodetector

A PIN structure semiconductor optical receiver includes first and second electrical contact layers and an intrinsic layer disposed between them. The intrinsic layer includes a stud having a stud axis and a stud cross-section. The first and second contact layers have dimensions in a plane perpendicular to the stud axis that are greater than the stud's cross-section. These layers are also elongated and have longitudinal axes offset angularly relative to each other to minimize facing areas of said electrical contact layers.

PIN structure semiconductor optical receiver

The laser device includes an amplifier including a III-V heterostructure arranged to generate photons, and a waveguide which forms a loop and is optically coupled to the amplifier. The amplifier is arranged facing the waveguide only in the region of a first section of the waveguide.

Laser device having a looped cavity capable of being functionalized

The device for coupling an electromagnetic wave includes a waveguide and a slit metal guide. The slit metal guide is formed by two metal elements which are coplanar and spaced out from one another so as to form the slit. The slit metal guide is arranged in a plane offset from the plane of the waveguide and partially covers said waveguide, said waveguide and the slit guide being maintained at a distance from one another by a dielectric.

Device for coupling an electromagnetic wave between a waveguide and a slit metal guide, method for manufacturing such a device, and optical and electric coupler for an object using the optical coupling device

The laser includes an amplifier with III-V heterostructure, designed to generate an optical wave, and a waveguide coupled optically to the amplifier, said waveguide having a hat-shaped cross section, the top of which is proximal to the amplifier. The top of the hat and the lateral sides of the hat are covered with a layer of a dielectric material in the vicinity of the amplifier. The hat is formed by a base and a protrusion of the waveguide, the material forming the base being distinct from the material forming the protrusion.

Heterogeneous laser with high efficiency and method for manufacturing the laser

Method of producing a photonic device including at least one light source and at least one photodetector on a structure including a waveguide layer, this method comprising the following steps: a) growing successively on a substrate (), a photodetection structure () and a light source structure (), the photodetection structure and the light source structure being made of a stack of layers, the light source layers being stacked on top of the photodetector layers and both structures sharing one of these layers. b) bonding the structure obtained by step a) to the said waveguide structure (), the light source structure being in contact with the said waveguide structure (), c) removing the substrate () from the structure obtained by step b), d) etching the structure () obtained by step c) to define the at least one photodetector (), e) etching the structure obtained by step d) to define the at least one light source (), f) forming electrodes () on the least one photodetector () and on the least one light source ().

Method of producing a photonic device and corresponding photonic device

Optical device with superimposed photonic circuits, for coupling to an optical waveguide. Said device comprises a substrate () and, on said substrate, an integrated photonic circuit () adapted to be coupled to at least one optical waveguide () which transmits a light signal () and for processing said signal. According to the invention, the circuit comprises two superimposed elementary integrated photonic circuits (), each of which is adapted to be coupled to a given polarization state of the signal and to process this state. The invention applies particularly to optical telecommunications.

Optical device with superimposed photonic circuits for coupling to one or more optical waveguides

A device for collecting light emitted by a laser source, including an optical wave guide arranged so as to collect a light signal emitted by the laser source, by coupling. The wave guide includes a loop coupled to a laser source in two coupling zones making it possible to recover optical modes circulating along the direction opposite to the required direction for the signal output from the device.

Device with wavelength selective coupler for collecting light emitted by a laser source

In a process for fabrication of an optical slot waveguide on silicon, a thin single-crystal silicon film is deposited on a substrate covered with an insulating buried layer; a local thermal oxidation is carried out over the entire depth of the thin single-crystal silicon film in order to form an insulating oxidized strip extending along the desired path of the waveguide; an insulating or semi-insulating layer is deposited on the silicon film; two openings having vertical sidewalls are excavated over the entire thickness of this insulating or semi-insulating layer, said openings being separated by a narrow gap constituting an insulating or semi-insulating vertical wall that will be the material of the slot; single-crystal silicon is grown in the openings and right to the edges of the insulating or semi-insulating wall; and then the upper part of the silicon is etched in order to complete the geometry of the waveguide.

Process for making a slot-type optical waveguide on silicon

Growing community of inventors

Saint Egreve, France

Jean-Marc Fedeli