U.S. Philips Corporation

Jean Marc Auger

Jean-Bernard Theeten

Philippe Autier

A method of manufacturing semiconductor devices is set forth using reactive ion plasma etching in which an optical grating is formed to etch underlying regions, such as dielectric material, semiconductor material, or alternate layers of different semiconductor material. The optical grating is formed with a rectangular profile having grooves and mask strips on a sample material where each of the grooves has a width L.sub.S substantially equal to the width L.sub.M of the mask strips. The optical grating is formed of a material which may be one of a photoresist, a dielectric compound, a metal, or a metallic compound. This method enables control of reactive ion etching during manufacture of integrated circuits of III-V compounds.

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Joinville-Le-Pont, France

Jean Marc Auger