Centre National De La Recherche Scientifique

Office National D'etudes Et De Recherches Aerospatiales (Onera)

Electricite De France

Commissariat a L'energie Atomique Et Aux Energies Alternatives

S.o.i.tec Silicon on Insulator Technologies

Université Pierre Et Marie Curie (Paris 6)

Office National D'etudes Et De Recherches Aerospatiales

Electricité De France—edf

Office Nathional D'etudes Et De Recherches Aerospatiales—onera—chemie De La Huniere

Université Pierre Et Marie Curie

Centre National De La Recherche Scientifique-Cnrs

Jean-Luc Pelouard

Fabrice Pardo

Riad Haidar

Daniel Lincot

Jean-François Guillemoles

Patrick Bouchon

Grégory Vincent

Myriam Paire

Jean-Jacques Greffet

François Marquier

Alexandre Archambault

Stéphane Collin

Simon Vassant

Stephane Collin

Michaël Verdun

Florian Proise

Jean-Jacques Yon

Arnaud Etcheberry

Riad Haïdar

Joël Deschamps

Laurent Lombez

Anne-Marie Goncalves

Emilie Steveler

Roland Teissier

St&eacute;phane Collin

Philippe Bove

Christophe Dupuis

Melania Lijadi

Antoine Bierret

Charlie Koechlin

Mathieu Fregnaux

Anais Loubat

Benjamin Portier

Emilie Sakat

Sebastien Jutteau

Paul Chevalier

Gregory Vincent

A device for multispectral imaging in the infrared, suitable for detecting at at least one first and one second detection wavelength is provided. It comprises a detection matrix array comprising a set of elementary detectors of preset dimensions forming an image field of given dimensions; and an image-forming optic having a given aperture number (N) and a given focal length (F), which aperture number and focal length are suitable for forming, at any point of the image field, an elementary focal spot covering a set of at least two juxtaposed elementary detectors. The device furthermore comprises a matrix array of elementary metal-dielectric guided-resonance filters, which matrix array is arranged in front of the detection matrix array at a distance smaller than a focal depth of the optic, the dimensions of the elementary filters being such that each elementary focal spot formed at each point of the image field covers at least two elementary filters; and the elementary filters are optimised for pass-band transmission in spectral bands centred on two different central wavelengths, equal to two of said detection wavelengths.

Device and method for multispectral imaging in the infrared

The invention relates to the chemical etching of a semiconductor material, including: In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.

Mask for protecting a semiconductor material for localized etching applications

A photovoltaic device comprising: a plurality of photovoltaic cells, separated from each other; a support receiving the cells; and a light guide in contact with the cells and comprising a primary guide with a surface that is proximal to the cells, where the proximal surface is oriented towards the cells and the support. The photovoltaic device comprises, between the cells, areas located between the support and the primary guide which comprise a material with an index of refraction less than that of the proximal surface, where the material is in contact with the proximal surface.

Photovoltaic device and associated fabrication method

A photodetector includes a Helmholtz resonator and a photosensitive structure that is placed in an electric-field-concentrating interval forming part of the Helmholtz resonator. Such a photodetector is in particular suitable for imaging applications. The wavelength of the radiation to be detected is determined by dimensions of the Helmholtz resonator, within a detection spectral interval of the photosensitive structure.

Photodetector with helmholtz resonator

A method for fabricating a photosensitive device, comprising: a first step of preparing, on a substrate, at least a first photosensitive portion, active within a range of wavelengths, the first portion being surrounded by a second portion that is inactive. A material, covering the first portion, is selectively arranged into a hydrophilic layer by an electrochemical process. The second portion comprises a hydrophobic material on an upper surface opposite the substrate. The method further comprises the following steps: spraying on the upper surfaces of the first and second portions a liquid comprising a transparent material, and forming a converging lens containing the material, above the first portion.

Method for fabricating a photosensitive device

According to one aspect, the invention relates to an angular optical filtering element (E) optimized for angular filtering about a given operating angle of incidence (&#x3b8;) in a given spectral band. The angular filtering element (E) comprises a first nanostructured, band-pass, spectral filter (11, 301) and a second nanostructured, band-pass, spectral filter (12, 302). Each of the first and second spectral filters comprises, respectively, in said spectral band, a first and a second central filtering wavelength that respectively has a first and second angular dispersion curve defined depending on the angle of incidence (&#x3b8;) on the optical filtering element (E), the curves of angular dispersion being secant about the operating angle of incidence (&#x3b8;) of the optical filtering element. The invention applies to the production of a selective angular filtering device and to a multidirectional optical detection system.

Angular optical filtering element for angular filtering having controlled angular selectivity

According to one aspect, the invention relates to an element for quantum photodetection of an incident radiation in a spectral band centered around a central wavelength &#x3bb;, having a front surface intended for receiving said radiation, and including: a stack of layers of semiconductor material forming a PN or PIN junction and including at least one layer made of an absorbent semiconductor material having a cut-off wavelength &#x3bb;&#x3e;&#x3bb;, the stack of layers of semiconductor material forming a resonant optical cavity; and a structure for coupling the incident radiation with the optical cavity such as to form a resonance at the central wavelength &#x3bb;allowing the absorption of more than 80% in the layer of absorbent semiconductor material at said central wavelength, and an absence of resonance at the radiative wavelength &#x3bb;, wherein the radiative wavelength &#x3bb;is the wavelength for which, at operating temperature, the radiative recombination rate is the highest.

Quantum detection element with low noise and method for manufacturing such a photodetection element

According to one aspect, the present invention concerns a terahertz modulator () intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal () presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means () allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation () of pre-determined frequency lying in said frequency band of use and means of control () apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation () by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal ().

Terahertz modulator

According to one aspect, the invention relates to a microbolometer array for thermal detection of light radiation in a given spectral band, comprising a supporting substrate and an array of microbolometers () of given dimensions, arranged in an array. Each of said microbolometers comprises a membrane () suspended above said supporting substrate, said membrane consisting of an element () for absorbing the incident radiation and a thermometric element () in thermal contact with the absorber, electrically insulated from said absorber element. The absorber element comprises at least one first metal/insulator/metal (MIM) structure comprising a multilayer of three superposed films of submicron-order thickness i.e. a first metallic film (), a dielectric film (), and a second metallic film (), said MIM structure being able to have a resonant absorption of said incident radiation at at least one wavelength in said spectral band. The area of the microbolometer pixel covered by said membrane () is less than or equal to half of the total area of the microbolometer pixel.

Microbolometer array with improved performance

A photovoltaic component that includes at least one first array of photovoltaic nano-cells is disclosed. Each photovoltaic component includes an optical nano-antenna exhibiting an electromagnetic resonance in a first resonant spectral band, at least one lateral dimension of the optical nano-antenna being subwavelength in size, and a spectral conversion layer allowing at least part of the solar spectrum to be converted to said first resonant spectral band.

Photovoltaic component with a high conversion efficiency

According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal () having a Reststrahlen band covering said spectral detection band, and comprising at least one interface with a dielectric means; coupling means obtained by the slab structure (), each slab forming an optical antenna, enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation having a frequency within the spectral detection band; and at least one first and one second connection terminal () that are in electrical contact respectively with a first and a second end of the interface, said ends opposing each other, and said connection terminals to be connected to an electrical reading circuit for measuring the variation of the impedance of the crystal between the opposing ends of the interface.

Terahertz detection cell

According to one aspect, the invention relates a spectral band-pass filter, which is optimized for the transmission of an incident wave at at least a first given central wavelength &#x3bb;, and which includes: a metal grating having a thickness (t) greater than approximately &#x3bb;/50 and including at least a first set of substantially identical, parallel slots having a width (W) less than around &#x3bb;/10, and being spaced apart periodically or quasi-periodically according to a first period that is less than said first central wavelength, a layer of dielectric material having a thickness (h) and a given refractive index (n), which is coupled to the metal grating to form a waveguide for the waves diffracted by the grating, said first period of the grating being designed such that only orders 0 and &#xb1;1 of a wave having normal incidence and a wavelength &#x3bb;are diffracted in the layer of dielectric material, the assembly of the dielectric layer and grating being suspended, during use, in a fluid having a refractive index of close to 1.

Spectral band-pass filter having high selectivity and controlled polarization

The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base layer; and at least one emitting, respectively collecting, layer. The collecting, respectively emitting, layer comprises: at least one first undercoat contacted with said base layer, substantially of similar composition as said emitting, respectively collecting, layer; and at least one second undercoat on the side opposite said base layer relative to said first undercoat.

Method for making a heterojunction bipolar transistor

This invention relates to an MSM type photo-detection device designed to detect incident light and comprising reflecting means () superposed on a support (), to form a first mirror for a Fabry-P&#xe9;rot type resonant cavity, a layer of material () that does not absorb light, an active layer () made of a semiconducting material absorbing incident light and a network () of polarization electrodes collecting the detected signal. The electrodes network is arranged on the active layer and is composed of parallel conducting strips at a uniform spacing at a period less than the wavelength of incident light, the electrodes network forming a second mirror for the resonant cavity, the optical characteristics of this second mirror being determined by the geometric dimensions of the said conducting strips. The distance separating the first mirror from the second mirror is determined to obtain a Fabry-P&#xe9;rot type resonance for incident light between these two mirrors.

MSM type photodetection device with resonant cavity comprising a mirror with a network of metallic electrodes

Vertical metal-semiconductor microresonator photodetecting device and production method thereof

Growing community of inventors

Paris, France

Jean-Luc Pelouard