Lgz Landis Gyr Zug Ag

Gyr Zug Ag

Lgz Landis

Igz Landis & Gyr Zug Ag

Jean-Luc Berchier

Radivoje Popovic

Katalin Solt

Heinz Lienhard

Gernot Schneider

Heinrich P Baltes

Tomislav Zajc

A Hall element incorporated inside a semiconductor body has a P-N junction barrier which surrounds the active zone of the Hall element in all directions. The output of the Hall element is connected through a feedback control circuit to control the thickness of the P-N junction barrier, thereby ensuring long duration, temperture stability and linearity for the Hall element.

Buried Hall element

A circuit for providing temperature compensation to a Hall element is disclosed. The temperature compensation circuit is used to generate control signals which act on the effective thickness of the current channel of the Hall element in a manner so as to oppose changes in the effective thickness of the current channel produced by temperature variations.

Method and circuit for the temperature compensation of a hall element

The magnetic field sensor is composed of a semiconductor magnetic field sensor, for example a magnetotransistor, and at least one NiFe or NiCo film disposed upon its surface. This film functions as a zero-crossing switch utilizing its magnetic induction/magnetic field-reversal hysteresis properties. The film is deposited immediately above the field sensitive zone of the magnetic field sensor with its easy axis oriented perpendicularly to the direction of current flow of the sensor. The semiconductor magnetic field sensor detects the magnetic induction generated by the film.

Magnetic field sensor

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Menzingen, Switzerland

Jean-Luc Berchier