Commissariat a L'energie Atomique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Centre National De La Recherche Scientifique

Université Paul Sabatier (Toulouse III)

Ulis

Jean-Louis Ouvrier-Buffet

Abdelkader Aliane

Sylvette Bisotto

Michel Vilain

Jean-Jacques Yon

Julie Widiez

Claire Vialle

Jerome Meilhan

Jean-Michel Hartmann

Philippe Tailhades

Jean-Antoine Gruss

Agnès Arnaud

Lionel Presmanes

Luc Andre

Astrid Astier

Nicolas Massoni

Chantal Beccia

Corinne Bonningue

André Perez

Duy Thong N'Guyen

Francois Simoens

Stéphane Caplet

Norbert Moussy

Christophe Dubarry

Pierre Imperinetti

Michel Ravetto

Wilfried Rabaud

Fran&ccedil;ois Marion

Bruno Mauvernay

Laurent Carle

Willy Ludurczak

Hacile Kaya

Dominique Marion

Emilien Peytavit

Damien Morel

Jérôme Meilhan

Duy Thong Nguyen

François Simoens

Stephanie Capdeville

Laurent Puech

Stéphanie Capdeville

Corine Bonningue

Jérome Meilhan

An optoelectronic device includes an array of germanium-based photodiodes including a stack of semiconductor layers, made from germanium, trenches, and a passivation semiconductor layer, made from silicon. Each photodiode includes a silicon-germanium peripheral zone in the semiconductor portion formed through an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of the semiconductor portion.

Optoelectronic device having an array of germanium-based diodes with low dark current

The invention concerns an electromagnetic radiation detection structure () comprising at least one absorbing element defining an absorption plane, and a MOSFET transistor (). The transistor comprises: at least one first and at least one second zone () of a first type of conductivity; at least one third zone () separating the first and second zones () from each other; and a gate electrode. The first zone (), the third zone () and the second zone () are formed respectively by a first, a third and a second layer that extend in the absorption plane parallel to each other and are arranged one after another in a direction perpendicular to the absorption plane. The gate electrode covers the third zone () along at least one lateral wall of said third zone ().

Electromagnetic radiation detection structure with optimised absorption and method for forming such a structure

A method for forming a detection structure for detecting electromagnetic radiation includes an MOS transistor as a transducer. The method is based on the use of lateral extension elements as a doping mask for the semiconductor layer of the transistor and an etching mask for the same semiconductor layer, in order to provide contact portions of a drain and a source of the transistor.

Method for manufacturing a detection structure with an optimised absorption rate, and said structure

The invention relates to a process for fabricating at least tensilely strained planar photodiodecomprising producing a stack formed from a semiconductor layermade of a first material and from an antireflection layerproducing a peripheral trenchthat opens onto a seed sublayermade of a second material of the antireflection layerepitaxy of a peripheral sectionmade of the second material in the peripheral trenchand returning to room temperature, a detecting sectionthen being tensilely strained because of the difference in coefficients of thermal expansion between the two materials.

Process for fabricating at least one tensilely strained planar photodiode

A process for fabricating an optoelectronic device including an array of germanium-based photodiodes including the following steps: producing a stack of semiconductor layers, made from germanium; producing trenches; depositing a passivation intrinsic semiconductor layer, made from silicon; annealing, ensuring, for each photodiode, an interdiffusion of the silicon of the passivation semiconductor layer and of the germanium of a semiconductor portion, thus forming a peripheral zone of the semiconductor portion, made from silicon-germanium.

Process for fabricating an array of germanium-based diodes with low dark current

The invention relates to a method for manufacturing at least one passivated planar photodiode, comprising the following steps:

Method for manufacturing at least one passivated planar photodiode with reduced dark current

A thermal detector including a substrate, an absorbent membrane including a fixed part and a deformable part, the latter including a shape-memory alloy, and being arranged with respect to the substrate in such a way that its free end is in contact with the substrate at the contact temperature Tabove the austenite start temperature A.

Suspended-membrane thermal detector comprising a deformable part for thermal short-circuit

The present disclosure relates to a method of manufacturing a semiconductor device, including the successive steps of: a) forming doped germanium on a germanium layer covering a first support; b) covering said doped germanium with a second support; and c) removing the first support.

Manufacturing of a semiconductor photosensitive device

A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region, having a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region of the first type of greater doping level than the substrate extending from the upper surface of the substrate, laterally surrounding the first region; and a fourth buried region of the first type of greater doping level than the substrate, forming a peripheral ring connecting the second region to the third region.

SPAD-type photodiode

The invention relates to the use of a material having a spinel ferrite/iron monoxide structure as a sensitive material in the form of a thin film for the bolometric detection of infrared radiation, the chemical composition of said structure, excluding doping agents that may be present, having empirical formula (I): (FeM)O, where x is strictly less than 1 and strictly greater than 0.75. The invention also relates to a bolometric device for infrared radiation detection and infrared imaging, comprising at least one sensor provided with a sensitive element in the form of a thin film as defined above.

Use of a combination of iron monoxide and spinel oxides as a sensitive material for detecting infrared radiation

A terahertz detection device comprises at least one terahertz antenna, a detection microbridge suspended above a substrate comprising a resistive load coupled to the antenna and a resistive bolometric element coupled to the resistive load, a bias circuit for biasing the bolometric element. The device further comprises a skimming microbridge suspended above the substrate, comprising a resistive bolometric element, and substantially identical to the detection microbridge, a reflective metal layer opposite to the skimming microbridge to obtain a destructive interference at the level of the skimming microbridge for a terahertz wavelength, a bias circuit to electrically bias the bolometric element of the skimming microbridge and a read circuit for measuring a difference between the electric signals of the microbridges.

Bolometric detector of an electromagnetic radiation in the terahertz range and array detection device comprising such detectors

A bolometric detector of a terahertz electromagnetic radiation includes at least one bolometric microbridge suspended above a substrate by support and thermal insulation arms, so as to form a cavity between the microbridge and the substrate. The microbridge includes a radiation collection means for collecting the electromagnetic radiation. A resistive means is resistively coupled with the collection means. A thermometric means is thermally coupled with the resistive means. The collection means includes at least one pair of antennas each of the antennas being substantially parallel to the microbridge. A first antenna is capable of collecting the radiation according to a first polarization axis. A second antenna is capable of collecting the radiation according to a second polarization axis, different from the first polarization axis.

Bolometric detector of an electromagnetic radiation in the terahertz range

A bolometric detector of a terahertz radiation, including an assembly reflective for said electromagnetic radiation; at least one bolometric microbridge suspended above the reflective assembly and including a first bowtie antenna, a resistive load coupled with said antenna, and a thermometric element coupled with the resistive load. The reflective assembly includes a reflective layer; an insulating layer on the reflective layer; a periodic array of metallic patterns on the insulating layer, the thickness and the dielectric permittivity of the insulating layer, and the pitch and the filling factor of the array being selected to obtain a constructive interference at the level of said microbridge.

Bolometric detector of an electromagnetic radiation in the terahertz range and detector array device comprising said detectors

A device for detecting electromagnetic radiation that comprises an active bolometer provided with a first element sensitive to said electromagnetic radiation and a reference bolometer identical to the active bolometer, provided with a second element sensitive to said electromagnetic radiation. The active bolometer and reference bolometer are arranged close to one another on the same substrate. A cover covers at least the part of the second sensitive element exposed to the electromagnetic radiation and arranges an empty space between said second sensitive element and the cover. The inner wall of the cover is constituted by an absorbent layer made from a material absorbing at least the thermal radiations emitted by the second sensitive element. A reflecting shield forms at least a part of the outer wall exposed to said electromagnetic radiation.

Electromagnetic radiation detecting device comprising an active bolometer and a shielded reference bolometer

This bolometric detector for electromagnetic radiation comprises: a first and a second crossed bow-tie antenna intended to collect electromagnetic radiation; a resistive load coupled to said antennas in order to convert the collected electromagnetic power into calorific power; a bolometric micro bridge structure suspended above substrate by support and thermal isolation arms with the micro bridge comprising: the resistive load; a thermometric element coupled to resistive load so that its temperature can rise due to the effect of the calorific power produced. The first antenna is located outside micro bridge and is capacitively coupled with the resistive load and the second antenna is located in micro bridge and is resistively coupled with the resistive load.

Bolometric detector for detecting electromagnetic radiation in the region extending from infrared to terahertz frequencies and an array detection device comprising such detectors

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Sevrier, France

Jean-Louis Ouvrier-Buffet