Alcatel N.v.

Jean-Louis Lievin

Francis Poingt

Leon Goldstein

Denis Leclerc

Joel Jacquet

Pierre Doussiere

Elisabeth Gaumont-Goarin

Francois Brillouet

Christine Labourie

Lionel Le Gouezigou

Dominique Bonnevie

Didier Sigogne

In the method, a protective resist (108) used for lithographic etching is caused to flow plastically under the constraint of its surface tension, thereby increasing its thickness around a projection (106) on which a window (104) is to be formed. The invention is particularly applicable to manufacturing semiconductor lasers.

Method of localized treatment on a projection, in particular for

In this laser two successive sections of a light guide form a light amplifier (S1) and a saturable absorber (S2). In the invention a passive section (S3) of the guide follows the absorber. The invention is applicable especially to processing an optical signal.

Semiconductor laser with a saturable absorber

In a method of manufacturing a planar buried heterojunction laser a semiconductor structure is etched to delimit a laser stripe upstanding on a confinement layer. Lateral layers surround the laser stripe to constitute the planar buried heterojunction laser. They are formed by a non-selective growth method not only at the sides of said stripe but also on top of said stripe to create a parasitic projection. These layers and the projection are subsequently covered with a contact localizing layer. The projection is then removed to form a contact window in the contact localizing layer for localizing an electrical contact on top of the laser stripe. The invention finds a particular application in the manufacture of lasers for fiber optic telecommunication systems.

Method of manufacturing a planar buried heterojunction laser

In a method of manufacturing a planar buried heterojunction laser, after etching to delimit a laser stripe in relief on a substrate, lateral layers to surround the stripe are formed by a non-selective growth method not only at the sides of the stripe but also above it to create a parasitic projection. This projection is then removed after separation from the substrate by selective attack of a lift-off stripe which was deposited for this purpose above the stripe prior to this etching. Passages are formed for the attack medium used for this purpose. The invention can be applied in particular to the manufacture of fiber optic transmission systems.

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Paris, France

Jean-Louis Lievin