Alcatel N.v.

Alcatel Lucent

Alcatel Optronics

Avonex Corporation

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Jean-Louis Gentner

Leon Goldstein

Guang-Hua Duan

Denis Leclerc

Francois Brillouet

Philippe Jarry

Francedillaois Brillouet

Bruno Thedrez

Jean-Francedillaois Vinchant

Francois Alexandre

Olivier Gauthier-Lafaye

Marie Antoinette Poisson

An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe&#x2014;Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.

Integrated optical structure comprising an optical isolator

A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 &#x3bc;m, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted InGaAsNPwith x&#x2267;0.48, y&#x2266;1&#x2212;z&#x2212;p, z&#x2266;0.05, p&#x2267;0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a 'massive' layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).

Semiconductor optical device on an indium phosphide substrate for long operating wavelengths

In order to facilitate resuming molecular beam epitaxy after etching a substrate or an epitaxial layer, the etching method is implemented in an ultra-high vacuum, and it consists in producing at least two simultaneous chemical beams converging towards the substrate or the layer, the beams being formed of substances, each of which is capable of reacting with elements of different types in the substrate or the layer so as to form volatile compounds. Application in particular to manufacturing photonic and optoelectronic components.

Method of etching a substrate by means of chemical beams

A semiconductor photonic diplex transceiver includes a laser to generate a first optical signal having a certain wavelength and a photodetector to detect a second optical signal having another wavelength. The diplex transceiver also includes an absorber of the first signal disposed between the laser and the detector which form integral parts of an optical waveguide. The laser generates the first signal in the form of a continuous wave and is disposed between the absorber and a selective modulator of the first signal. This reduces the problems of optical and electrical crosstalk between the transmit and receive functions. Applications include user premises optical fiber transmit/receive equipments.

Photonic diplex transceiver

An optical waveguide includes, in monolithic manner, a rear segment, a transition segment, and a front segment extending and succeeding one another along the length of the waveguide. A lateral confinement factor and a width the waveguide are respectively larger and smaller in the rear segment than in the front segment. According to the invention, the width increases in the transition segment until it reaches a value that is larger than that of the front segment. The invention is particularly applicable to integrating together a laser and an optical modulator for a telecommunications system.

Segmented optical waveguide suitable in particular for being included in

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Gif sur Yvette, France

Jean-Louis Gentner