Centre National De La Recherche Scientifique

Stmicroelectronics (grenoble) Sas

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (rousset) Sas

Jean-Jacques Greffet

Jean-Luc Pelouard

Fabrice Pardo

Simon Vassant

Alexandre Archambault

François Marquier

Roch Espiau De Lamaestre

Bernard Guillaumot

Ruben Esteban Llorente

According to one aspect, the present invention concerns a terahertz modulator () intended to be used in a given frequency band of use. The modulator comprises a semi-conductor polar crystal () presenting a Reststrahlen band overlapping said frequency band of use and presenting at least one interface with a dielectric medium, coupling means () allowing the resanant coupling of an interface phonon polariton (IPhP) supported by said interface and of an incident radiation () of pre-determined frequency lying in said frequency band of use and means of control () apt to modify the intensity of the coupling between said interface phonon polariton and said incident radiation () by modification of the dielectric function of the polar crystal in the Reststrahlen band of the polar crystal ().

Terahertz modulator

According to a first aspect of the invention, the invention relates to a terahertz detection cell for detecting radiations having frequencies within a given spectral detection band, said cell comprising: a polar semi-conductor crystal structured such that it forms at least one slab of crystal, said crystal () having a Reststrahlen band covering said spectral detection band, and comprising at least one interface with a dielectric means; coupling means obtained by the slab structure (), each slab forming an optical antenna, enabling the resonant coupling of an interface phonon polariton (IPhP) supported by said interface and an incident radiation having a frequency within the spectral detection band; and at least one first and one second connection terminal () that are in electrical contact respectively with a first and a second end of the interface, said ends opposing each other, and said connection terminals to be connected to an electrical reading circuit for measuring the variation of the impedance of the crystal between the opposing ends of the interface.

Terahertz detection cell

A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from &#x3bb;0/10*nto &#x3bb;0/2*n, where &#x3bb;0 is the wavelength in vacuum of the emitted light and nis the effective refractive index of the mode formed in the cavity created by the two metallizations.

Source of photons resulting from a recombination of localized excitons

Growing community of inventors

Verriéres le Buisson, France

Jean-Jacques Greffet