Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Stmicroelectronics (crolles 2) Sas

Commissariat À I'energie Atomique

Jean-Francois Nodin

Veronique Sousa

Sandrine Lhostis

Elisa Vianello

Raluca Tiron

Marie-Claire Cyrille

Bertrand Delaet

Véronique Sousa

Selina La Barbera

The disclosed process includes the successive stages of providing a substrate comprising a dielectric layer; forming a first layer of block copolymers on a part of the dielectric layer, so that the dielectric layer exhibits free zones with a random spatial distribution; etching the free zones, so as to structure the dielectric layer; removing the first layer of block copolymers; forming a first electrode on the structured dielectric layer; forming a memory layer, of resistive memory type, on the first electrode; forming a second electrode on the memory layer; forming a second layer of block copolymers on a part of the second electrode, so that the second electrode exhibits free zones with a random spatial distribution; etching the free zones, so as to structure the second electrode; and removing the second layer of block copolymers.

Process for the manufacture of a recurrent neural network calculator

A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a central region laterally surrounded with a peripheral region, the crystallization and melting temperatures of the central region being respectively lower than those of the peripheral region.

Phase-change memory cell

A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a first region adjacent to a second region itself adjacent to at least one third region, the first, second, and third regions each extending from the upper electrode to the lower electrode, the crystallization temperature of the second region ranging between that of the first region and that of the third region, and the melting temperatures of the first, second, and third regions being substantially identical.

This radio-frequency oscillator includes a magnetoresistive device in which an electric current is able to flow. The magnetoresistive device includes a first magnetic layer, known as a 'trapped layer', whereof the magnetization is of fixed direction. The magnetoresistive device further includes a second magnetic layer known as a 'free layer' and a non-magnetic layer, known as an &#x201c;intermediate layer&#x201d;, interposed between the first and second layer, known as the intermediate layer. The oscillator further includes means capable of causing an electron current to flow in said layers constituting the aforementioned stack and in a direction perpendicular to the plane which contains said layers. One of the three layers constituting the magnetoresistive device includes at least one constriction zone of the electric current passing through it.

Growing community of inventors

Quaix en Chartreuse, France

Jean-Francois Nodin