Imec Vzw

Tokyo Electron Limited

Katholieke Universiteit Leuven, Ku Leuven R&d

Katholieke Universiteit Leuven

Jean-Francois De Marneffe

Liping Zhang

Eiichi Nishimura

Tatsuya Yamaguchi

Shigeru Tahara

Mikhail Rodionovich Baklanov

Koichi Yatsuda

Yannick Feurprier

Frederic Lazzarino

Khashayar Babaei Gavan

Boon Teik Chan

Efrain Altamirano Sanchez

Peter De Schepper

Mikhaïl Baklanov

Jacopo Franco

Han Chung Lin

Inge Asselberghs

Tibor Grasser

Daniil Marinov

Vladimir Samara

A method for improving a bias temperature instability of a SiOlayer comprises exposing the SiOlayer to atomic hydrogen.

Bias temperature instability of SiOlayers

A semiconductor device manufacturing method of forming a trench and a via in a porous low dielectric constant film formed on a substrate as an interlayer insulating film, includes: embedding a polymer having a urea bond in pores of the porous low dielectric constant film by supplying a raw material for polymerization to the porous low dielectric constant film; forming the via by etching the porous low dielectric constant film; subsequently, embedding a protective filling material made of an organic substance in the via; subsequently, forming the trench by etching the porous low dielectric constant film; subsequently, removing the protective filling material; and after the forming a trench, removing the polymer from the pores of the porous low dielectric constant film by heating the substrate to depolymerize the polymer, wherein the embedding a polymer having a urea bond in pores is performed before the forming a trench.

Semiconductor device manufacturing method

In a first aspect, the present disclosure relates to a method for removing an organic sacrificial material from a 2D material, comprising: providing a target substrate having thereon the 2D material and a layer of the organic sacrificial material over the 2D material, infiltrating the organic sacrificial material with a metal or ceramic material, and removing the organic sacrificial material.

Removing an organic sacrificial material from a two-dimensional material

A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. The first gas is a processing gas having a saturated vapor pressure of less than or equal to 133.3 Pa at a temperature of a stage on which the object is mounted in the processing chamber, or includes the processing gas. In the step of supplying the first gas, no plasma is generated, and a partial pressure of the processing gas which is supplied into the processing chamber is set to be greater than or equal to 20% of the saturated vapor pressure.

Method of etching porous film

A method is provided for in-situ monitoring of etch uniformity during plasma etching, on the basis of the detection of interferometry patterns. The method is applicable to a reactor wherein a plasma is created in the area between the surface to be etched and a counter-surface arranged essentially parallel to the surface to be etched. The occurrence of interference patterns is detected at a location that is placed laterally with respect to the area between the surface to be etched and the counter-surface. The presence of an interference pattern at a particular wavelength is observed through the detection of oscillations of the light intensity measured by an optical detector, preferably by the standard Optical Emission Spectrometry tool of the reactor. When these oscillations are no longer detectable, non-uniformity exceeds a pre-defined limit. The counter surface is arranged such that the oscillations are detected.

Method and apparatus for real-time monitoring of plasma etch uniformity

The disclosed technology generally relates to semiconductor fabrication, and more particularly to plasma etching of dielectric materials having pores. In one aspect, a method for etching a porous material in an environment includes contacting the porous material with an organic gas at a pressure and a temperature. The organic gas is such that at the pressure and the temperature, the organic gas remains in a gas state when outside of the porous material, while the organic gas condenses into an organic liquid upon contacting the porous material. Upon contacting the porous material, the organic gas thereby fills the pores of the porous material with the organic liquid. Subsequent to contacting the porous material, the method additionally includes plasma etch-treating of the porous material having filled pores, thereby evaporating a fraction of the organic liquid filling the pores of the porous material.

Plasma etching of porous substrates

The present disclosure is related to a method for treating a photoresist structure on a substrate, the method comprising producing one or more resist structures on a substrate, introducing the substrate in a plasma reactor, and subjecting the substrate to a plasma treatment at a temperature lower than zero degrees Celsius, such as between zero and &#x2212;110&#xb0; C. The plasma treatment may be a Hplasma treatment performed in an inductively coupled plasma reactor. The treatment time may be at least 30s.

Plasma method for reducing post-lithography line width roughness

Growing community of inventors

Bossut-Gottechain, Belgium

Jean-Francois De Marneffe