Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Thales

Avanex Corporation

Alcatel Lucent

Jean Decobert

Jean-Luc Reverchon

Denis Leclerc

Jean-Louis Gentner

Christophe Kazmierski

Florian Legoff

L&eacute;on Goldstein

Eric Tournie

François Lelarge

Christophe Ougier

Hélène Debregeas-Sillard

Marie Antoinette Poisson

The invention relates to a radiation detector element () comprising a stack () of layers superimposed in a stacking direction (Z), the stack () having a first face () and a second face () and comprising a radiation-absorbing layer () consisting of a first semiconductor material (M) having a first band gap value and at least one barrier layer () consisting of a second semiconductor material (M) having a second band gap value, the second band gap value being strictly higher than the first band gap value. The second face () has at least one strip () defined in the stacking direction (Z) by the barrier layer (), the strip () consisting of the second semiconductor material (M) and having a doping of the first type and a free carrier density higher than or equal to 1.1017 cm&#x2212;3.

Radiation detector element and imager comprising an assembly of radiation detector elements

Disclosed is a radiation detector element including a stack of layers superimposed in a stacking direction, the stack having a first face and a second face and including a radiation-absorbing layer consisting of a first semiconductor material having a first band gap value and at least one barrier layer consisting of a second semiconductor material having a second band gap value, the second band gap value being strictly greater than the first band gap value. The stack further delimits a primary hole traversing each of the layers of the stack, the primary hole receiving at least part of a primary electrode. The barrier layer includes a first conducting zone having a free carrier density greater than or equal to 1.10/cm.

A semiconductor optical component is disclosed which includes a semiconductor material confinement layer containing acceptor dopants such that the doping is p-type doping. The confinement layer is deposited on another semiconductor layer and defines a plane parallel to the other semiconductor layer. Furthermore, the p-type doping concentration of the confinement layer has at least one gradient significantly different from zero in one direction in the plane. A method of fabricating the component is also disclosed.

Semiconductor optical component and a method of fabricating it

Growing community of inventors

Palaiseau, France

Jean Decobert