L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des

L'air Liquide, Soci&#xe9;t&#xe9; Anonyme Pour L'etude Et L'exploitation Des Proc&#xe9;d&#xe9;s Georges Claude

Jean-Claude Parent

Michel Moisan

Jean-Christophe Rostaing

Francis Bryselbout

Marie-Helene Renaudin

Provided are a process and apparatus for purifying a gas. In accordance with the process, the gas to be purified flows through a hollow dielectric tube. An electric field is created in the gas to be purified by a traveling electromagnetic wave which travels in the dielectric tube and creates, in the gas, an atmospheric-pressure plasma which is not in local thermodynamic equilibrium, for the purpose of dissociating impurities in the gas to form reactive compounds. The formed reactive compounds are reacted with a corresponding reactive material for eliminating the reactive compounds from the gas to be purified.

Process for purifying a gas and apparatus for the implementation of such a process

Provided is a process for purfying a gas. In the process, the gas to be purified flows through a hollow dielectric tube. An electric field in the gas to be purified is created by a traveling electromagnetic wave which travels in the dielectric tube and is suitable for creating, in the gas, an atmospheric-pressure plasma which is not in local thermodynamic equilibrium, for the purpose of dissociating impurities in the gas in order to form reactive compounds. The formed reactive compounds are reacted with a corresponding reactive material for eliminating the reactive compounds from the gas to be purified.

Process for purifying a gas and apparatus for the implementation of such

Process for preparing disilane, wherein a raw gas including monosilane, disilane, trisilane and impurities such as phosphine, hydrogen sulfide, arsine, disiloxane and higher siloxanes, undergoes a step of separation by distillation for the substantial elimination of the other compounds of silicon, except disiloxane, and the substantial elimination of phosphine, hydrogen sulfide and arsine impurities, wherein a final purification of the disilane takes place by selective adsorption on molecular sieves, in which one is a sieve of type 3 A and which is used for the elimination of the siloxanes and hydrogen sulfide and the other is a sieve of type 4 A for the elimination of phosphine and arsine.

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Garches, France

Jean-Claude Parent