Stmicroelectronics S.a.

Other

Jean-Claude Oberlin

Didier Dutartre

Yvon Gris

Philippe Delpech

Germaine Troillard

Jocelyne Mourier

Henri Banvillet

Genevi&egrave;ve Lunardi

Jos Guelen

Catherine Maddalon

Method of manufacturing a capacitor integrated onto a silicon substrate, comprising a step of depositing a layer of first electrode, a step of depositing a layer of a dielectric material, a step of exposure of the dielectric layer to a plasma and a step of depositing a layer of second electrode. This creates the advantage of a design of capacitors with metallic electrodes having a good linearity versus voltage.

Method of manufacturing an integrated capacitor onto a silicon substrate

A method of manufacturing a capacitor includes the steps of depositing a first metal level and etching it to leave in place a region corresponding to a first plate of a capacitor and an area of contact with an upper level; depositing an insulating layer; forming a first opening above the first capacitor plate; depositing a thin insulating layer; forming a second opening above the contact area; depositing a second metal level; removing by physico-chemical etching the second metal layer outside regions where it fills up the openings; and depositing a third metal level and leaving in place portions thereof.

Method of formation of a capacitor on an integrated circuit

A method for characterizing a structure including single-crystal silicon-germanium areas on a single-crystal silicon substrate, including the steps of measuring the X-ray diffraction spectrum of the structure, simulating the diffraction spectrum of a single-crystal silicon substrate, simulating the diffraction spectrum of a single-crystal silicon substrate entirely coated with a single-crystal SiGe layer, adding the simulated spectrums while assigning them weights,and,to obtain a sum spectrum, comparing the sum spectrum with the measured spectrum and adjusting the simulation parameters and weight,to reduce the distance between the sum spectrum and the measured spectrum, and after optimizing, adopting the simulation parameters as the measurement parameters.

Characterizing of silicon-germanium areas on silicon

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Le Touvet, France

Jean-Claude Oberlin