Centre National De La Recherche Scientifique

France Telecom

France Telecom Etablissement Autonome De Droit Public

Photonis France

Jean-Christophe Harmand

Théo Jegorel

Paul Voisin

Erwan Bigan

Moustapha Conde

Michel Allovon

Yannick Ollivier

Laurent Travers

Claude Alibert

Andreas Kohl

A transmission electron microscope is provided, including a column defining an object chamber, at least one ballistic material jet source outside the object chamber, and tightly attached to the column, facing an opening, referred to as a port, provided on the column; having at least one jet source arranged outside the column and including a collimator of the material jet towards a predetermined direction, passing through the port and leading into the object chamber so that a portion of the material jet exits the source in the object chamber.

Transmission electron microscope provided with at least one ballistic material jet source

The invention discloses a photocathode comprising an amorphous substrate such as a glass substrate () presenting an input face that will receive incident photons and a back face opposite the front face. Nanowires () made from at least one III-V semiconducting material are deposited on the back face of the substrate and extend from this face in a direction away from the front face. The invention also relates to a method for manufacturing such a photocathode by MBE.

Photocathode with nanowires and method of manufacturing such a photocathode

The present invention relates to the technological field of manufacturing semiconductor materials for optoelectronic and microelectronic components, and it relates specifically to the method of making stacks of metamorphic layers of materials having lattice mismatches of several percent between one another or relative to the substrate.

Method of relaxing a stressed film by melting an interface layer

An integrated monolithic electrooptical component having an electrooptical modulator and a semiconductor laser on the same substrate. The modulator and laser are formed from a stack of semiconductor layers. The modulator includes one layer that is absorbent and the laser includes one layer that is active. Both absorbent and active layers are constituted by the same epitaxied structure of a highly coupled composition superlattice with alternation of semiconductor layers of different compositions. A forward voltage is applied to the laser layers that causes the active layer of the laser to emit a radiation which then traverses the absorbent layer of the modulator. A reverse voltage is applied to the modulator layers in order to modulate the absorption of the radiation traversing the modulator.

Highly coupled superlattice integrated laser-modulator component

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Villejuif, France

Jean-Christophe Harmand