Commissariat a L'energie Atomique

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Centre National De La Recherche Scientifique

Stmicroelectronics S.a.

Stmicroelectronics (grenoble 2) Sas

Stmicroelectronics (rousset) Sas

Jean-Charles Barbe

Maud Vinet

Yves Morand

Lukasz Borowik

Erwan Dornel

Thomas Ernst

Thierry Poiroux

Ezra Bussmann

Fabien Cheynis

Claire Fenouillet-Beranger

Emmanuel Augendre

Laurent Clavelier

Sébastien Bolis

Sylvain Maitrejean

Aomar Halimaoui

Sylvain Barraud

Denis Mariolle

Francois Andrieu

Bernard Previtali

Daniel Girardeau-Montaut

Frederic Leroy

Benoit Mathieu

Joël Eymery

François Andrieu

Francois De Crecy

François De Crecy

Elisabeth Delevoye

Pierre-Louis Charvet

Pierre Mur

Béatrice Drevet

Marek Kostrzewa

Claire Gallon

Olivier Faynot

Carine Jahan

Pierre Müller

Simeon Morvan

Frédéric Leroy

Younes Lamrani

Yann Almadori

Sylvian Barraud

Benoit Vianay

Siméon Morvan

Method for producing nanocrystals of semiconductor, comprising at least:

Method for producing nanocrystals with controlled dimensions and density

A method of modifying a strain state of a first channel structure in a transistor is provided, said structure being formed from superposed semiconducting elements, the method including providing on a substrate at least one first semiconducting structure formed from a semiconducting stack including alternating elements based on at least one first semiconducting material and elements based on at least one second semiconducting material different from the first material; then removing portions of the second material from the first semiconducting structure by selective etching, the removed portions forming at least one empty space; filling the empty space with a dielectric material; forming a straining zone on the first semiconducting structure based on a first strained material having an intrinsic strain; and performing thermal annealing to cause the dielectric material to creep, and to cause a change in a strain state of the elements based on the first material.

Method of modifying the strain state of a semiconducting structure with stacked transistor channels

A method for stressing a pattern having a pattern surface, in a layer of semiconductive material that can be silicon on the surface of a stack of layers generated on the surface of a substrate, said stack comprising at least one stress layer of alloy SiGewith x and y being molar fractions, and a buried layer of silicon oxide, comprises: etching at the periphery of a surface of dimensions greater than said pattern surface, of the buried layer of silicon oxide and layer of alloy SiGeover a part of the depth of said layer of alloy; the buried layer of silicon oxide being situated between said layer of semiconductive material and said stress layer of alloy SiGe. In a transistor structure, etching at the periphery of said surface obtains a pattern thus defined having dimensions greater than the area of interest situated under the gate of the transistor.

Method for stressing a thin pattern and transistor fabrication method incorporating said method

A method for making a semi-conductor nanocrystals, including at least the steps of:

Method for making semi-conductor nanocrystals oriented along a predefined direction

A method for making semi-conductor nanocrystals, including at least the steps of:

Method for making semi-conductor nanocrystals

A method for the determination of the diffusion tensor anisotropy or the surface energy anisotropy that does not require the formation of particular structures, and that is capable of being performed in cases of moderate-amplitude perturbations. The invention relates to measuring the temporal evolution of natural or artificial roughnesses, and analyzing the results in the firm of the 2D power spectral density for moderate-amplitude perturbations typically characterized by amplitude/wavelength ratios of the perturbation for a spatially defined perturbation having two wavelengths along two orthogonal directions, the ratios typically being less than 0.3.

Method of measuring an anisotropic surface diffusion tensor or surface energy anisotropies

A method for manufacturing a strained channel MOS transistor including the steps of: forming, at the surface of a semiconductor substrate, a MOS transistor comprising source and drain regions and an insulated sacrificial gate which partly extends over insulation areas surrounding the transistor; forming a layer of a dielectric material having its upper surface level with the upper surface of the sacrificial gate; removing the sacrificial gate; etching at least an upper portion of the exposed insulation areas to form trenches therein; filling the trenches with a material capable of applying a strain to the substrate; and forming, in the space left free by the sacrificial gate, an insulated MOS transistor gate.

Method for manufacturing a strained channel MOS transistor

An optical device having a deformable membrane comprising a flexible film having at least one peripheral anchoring zone, a central zone and an intermediate zone between the central zone and the anchoring zone. The membrane also includes one or more movable parts of electrostatic actuating means, each movable part being formed from a leg terminating on one side in a foot mechanically fastened to a film-fastening region located in the intermediate zone and terminating on the other side in a free end. The legs incorporate a movable electrode, the free end having to be attracted by a fixed electrode of the actuating means. The free end is placed facing the free end so as to deform at least the central zone of the membrane.

Membrane, especially for an optical device having a deformable membrane

The invention relates to a method for straining or deforming a pattern or a thin layer (), starting from an initial component comprising the said thin layer and a prestressed layer (), this method comprising:

Method of stressing a thin pattern

A method of manufacturing at least one nanowire, the nanowire being parallel to its supporting substrate, the method including the formation on the supporting substrate of a structure comprising a bar and two regions, a first end of the bar being secured to one of the two regions and a second end of the bar being secured to the other region, the width of the bar being less than the width of the regions, the subjection of the bar to an annealing under gaseous atmosphere in order to transform the bar into a nanowire, the annealing being carried out under conditions allowing control of the sizing of the neck produced during the formation of the nanowire.

Method of manufacturing nanowires parallel to the supporting substrate

The invention relates to a method for forming microcavities () of different depths in a layer () based on at least an amorphous or monocrystalline material, comprising at least the following steps in which: at least one shaft and/or trench is formed in the layer () so as to extend through one face () thereof, such that two sections of the shaft and/or the trench, in two different planes parallel to the face (), are aligned in relation to one another along an alignment axis forming a non-zero angle with a normal to the plane of said face (); and the layer () is annealed in a hydrogenated atmosphere so as to transform the shaft and/or trench into at least two microcavities ().

Method for forming non-aligned microcavities of different depths

A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is arranged an etching mask, and anneals, under hydrogenated atmosphere, the layer, the etching mask being maintained on the layer during the annealing. The depths and widths of the sections of the two trenches, and the width of a section of the portion of the layer, are such that the annealing eliminates a part of the portion of the layer, the two trenches then forming a single trench in which a remaining part of the portion of the layer forms the wire.

Method for forming microwires and/or nanowires

A method of forming a microelectronic device comprising, on a same support: at least one semi-conductor zone strained according to a first strain, and at least one semi-conductor zone strained according to a second strain, different to the first strain, comprising: the formation of semi-conductor zones above a pre-strained layer, then trenches extending through the thickness of the pre-strained layer, the dimensions and the layout of the semi-conductor zones as a function of the layout and the dimensions of the trenches being so as to obtain semi-conductor zones having a strain of the same type as that of the pre-strained layer and semi-conductor zones having a strain of a different type to that of the pre-strained layer.

Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectively

Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals (). It consists in:

Method for forming a structure provided with at least one zone of one or several semiconductor nanocrystals localised with precision

A mechanical oscillator including: at least two deformable linking beams connected to a stationary substrate at a plurality of anchoring points which are distributed along the deformable linking beams, the deformable linking beams facing each other; and a plurality of vibrating cells each connected to and disposed between the at least two deformable linking beams, the plurality of vibrating cells being distributed along the deformable linking beams and a length between two of the plurality of anchoring points being greater or equal to a length of a number of cells greater or equal to 1, wherein each of the plurality of vibrating cells includes a deformable beam having a closed contour, the deformable beam being connected to the at least two deformable linking beams at a first pair of parts which are opposite to each other in the deformable beam.

Mechanical oscillator formed by a network of basic oscillators

Growing community of inventors

Grenoble, France

Jean-Charles Barbe