Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Centre National De La Recherche Scientifique-cnrs

Jean Charbonnier

Maud Vinet

Daniel Fruchart

Salvatore Miraglia

Sophie Rivoirard

Patricia De Rango

Candice Thomas

Perceval Coudrain

Natalia Skryabina

Jean-Louis Pornin

Stephan Borel

Frederic-Xavier Gaillard

Yvain Thonnart

Stéphane Bernabe

Yann-Michel Niquet

Frédéric-Xavier Gaillard

Olivier Castany

Michel Jehan

Remi Franiatte

Hélène Jacquinot

Thomas Bedecarrats

Nataliya Skryabina

Nadine David

Rémi Franiatte

Jean-Luc Sauvageot

A method is provided for localised deposition of a material over an element, including deposition of a portion of the material over a portion of a surface of a support; positioning of a portion of the element against the portion of the material; annealing of the material portion increasing, at the end of the treatment, the adhesion force of the material against the portion of the element, the materials of the portion of the element and of the portion of the surface of the support being selected such that the adhesion of the material against the portion of the element is, at the end of the annealing, higher than that of the material against the portion of the surface of the support; and separation of the element and the support at the interface between the material and the portion of the surface of the support, the material remaining secured to the portion of the element.

Method for the localized deposition of a material on a metal element

A spin qubit quantum device includes a semiconductor portion having a first region disposed between two second regions; a first control gate disposed in direct contact with the first region and configured to control a minimum potential energy level in the first region, and disposed in direct contact with a first face of the semiconductor portion; and second electrostatic control gates, each disposed in direct contact with one of the second regions and configured to control a maximum potential energy level in one of the second regions, and disposed in direct contact with a second face, opposite to the first face, of the semiconductor portion, The first gate is not aligned with the second gates.

Device comprising electrostatic control gates distributed on two opposite faces of a semiconductor portion

An integrated structure intended to connect a plurality of semiconductor devices, the integrated structure including a substrate, a first face and a second face, the first face being intended to receive the semiconductor devices, the integrated structure including, at the first face, at least one routing level, the routing level or levels including: at least one first conductor routing track in a conductor material; and at least one first superconductor routing track made from a superconductor material.

Integrated structure with bifunctional routing and assembly comprising such a structure

A functional chip includes a substrate including a first face and a second face, the second face of the substrate forming the front face of the functional chip; a first oxide layer on the first face of the substrate; a second oxide layer on the first oxide layer; a first routing level formed on the surface of the second oxide layer in contact with the first oxide layer; a third oxide layer on the second oxide layer wherein a semiconductor component is inserted; a rear face formed by the surface of the third oxide layer opposite the second oxide layer, the rear face including superconductor routing tracks surrounded at least partially by one or more conductor routing tracks, the semiconductor component being connected to the superconductor routing tracks via superconductor vias and the conductor routing tracks of the rear face being connected to the routing level via conductor vias.

Chip with bifunctional routing and associated method of manufacturing

The invention relates to an optoelectronic device comprising a photonic interposer comprising: a photonic circuit containing at least one active optical component, an upper interconnect layer comprising at least one upper control portion, a lower interconnect layer comprising at least one lower control portion and lower intermediate portions, at least one TSV directly connecting the upper control portion to the lower control portion, conductive vias connecting the lower intermediate portions to the active optical component; at least one first microelectronic chip joined to the upper face of the photonic interposer; a second microelectronic chip joined to the lower face of the photonic interposer, and connected to the lower control portion and to the lower intermediate portions.

Optoelectronic device comprising an active photonic interposer to which a microelectronic chip and an electro-optical conversion chip are connected

Method for producing an interface for assembling temporarily a microelectronic support and a handle, comprising at least the formation of a first layer comprising at least one material capable of releasing at least one chemical species under the action of a physical-chemical treatment, the formation of a second layer comprising at least one material capable of receiving the at least one chemical species so as to cause its embrittlement, and the embrittlement of the interface by application of a heat treatment, such that the at least one species is released from the first layer and reacts with all or part of the material of the second layer.

Method for producing an interface intended to assemble temporarily a microelectronic support and a manipulation handle, and temporary assembly interface

A process for exposing at least one region of a face, known as the front face, of an electronic device, the process including the following steps: A bonding step for a cover () to the front face, the bonding being undertaken such that the cover () forms a closed cavity () with the region, advantageously hermetically sealed; Formation of an encapsulation coating (), of thickness E, covering the front face and the cover (); A thinning step for the encapsulation coating (), the thinning step including removal of a removal thickness E, less than the thickness E, of the encapsulation coating (), the removal thickness Ebeing adjusted such that an opening is formed in the cover ().

Process for the exposure of a region on one face of an electronic device

An electronic chip and a method of making thereof is provided, where the electronic chip includes at least: an electronic circuit arranged at a front face of a substrate; a first protective layer arranged on a rear face of the substrate; a resistive element arranged on the first protective layer and facing at least one part of the electronic circuit, mechanically supported by the first protective layer and connected electrically and/or in an inductive manner to the electronic circuit; a second protective layer covering at least the resistive element; and in which the first protective layer comprises at least one dielectric material having a resistance to chemical etching by at least one chemical etching agent less than or equal to that of a dielectric material of the second protective layer.

Electronic chip comprising multiple layers for protecting a rear face

The present invention relates to pulverulent materials suitable for storing hydrogen, and more particularly to a method of preparing such a material, in which: (A) a composite metallic material having a specific granular structure is prepared by co-melting the following mixtures: a first metallic mixture (m1), which is an alloy (a1) of body-centered cubic crystal structure, based on titanium, vanadium, chromium and/or manganese, or a mixture of these metals in the proportions of the alloy (a1); and a second mixture (m2), which is an alloy (a2), comprising 38 to 42% zirconium, niobium, molybdenum, hafnium, tantalum and/or tungsten and 56 to 60 mol % of nickel and/or copper, or else a mixture of these metals in the proportions of the alloy (a2), with a mass ratio (m2)/(m1+m2) ranging from 0.1 wt % to 20 wt %; and (B) the composite metallic material thus obtained is hydrogenated, whereby the composite material is fragmented (hydrogen decrepitation).

Pulverulent intermetallic materials for the reversible storage of hydrogen

The invention relates to a method for preparation of a material adapted to reversible storage of hydrogen, including steps consisting of providing a first powder of a magnesium-based material, hydrogenating the first powder to convert at least part of the first powder into metal hydrides, mixing the first hydrogenating powder with a second powder additive, the proportion by mass of the second powder in the mix obtained being between 1% and 20% by mass, wherein the additive is formed from an alloy with a centred cubic structure based on titatnium, vanadium and at least one other metal chosen from chromium or manganese, and grinding the mix of first and second powders.

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Grenoble, France

Jean Charbonnier