International Business Machines Corporation

Etat Francais

Armines

Compagnie Industrielle Des Telecommunications

Jean Canteloup

Philippe Coronel

Renzo Maccagnan

Michel Arsene Braguier

Alain M Mocellin

Jean-Phillippe Vassilakis

Roger J Tueta

Method and system for real-time in-situ interactive supervision of a step performed in a tool during semiconductor wafer fabrication process. The system includes a tool and the computer attached thereto, an end point detection controller, a database and a supervisor to supervise the whole wafer processing for that step. The controller is used to monitor a key process parameter of the step and is adapted to perform in-situ measurements. The database contains the evolution of said process parameter in normal operating conditions and in all the identified deviations. It further contains the history of the wafer until this step and a reference to the batch and process names for this step and the wafer identification number. At the end of the step, the important process parameters and any alert code are stored in the database to up-date the wafer history. This technique allows a total clusterized wafer fabrication process and prevents wafer rejection.

Method and system for semiconductor wafer fabrication process real-time in-situ interactive supervision

In the manufacturing of 16 Mbit DRAM chips, the deep trench formation process in a silicon wafer by plasma etching is a very critical step when the etching gas includes 0.sub.2. As a result, the monitoring of the trench formation process and thus the etch end point determination is quite difficult. The disclosed monitoring method is based on zero order interferometry. The wafer is placed in a plasma etcher and a plasma is created. A large area of the wafer is illuminated through a view port by a radiation of a specified wavelength at a normal angle of incidence. The reflected light is collected then applied to a spectrometer to generate a primary signal S of the interferometric type. Next, this signal is applied in parallel to two filters. A low-pass filter produces a first secondary signal S1 that contains data related to the deposition rate and the redeposited layer thickness. A band-pass filter produces a second secondary signal S2 that contains data related to the trench etch rate and depth. The band-pass filter is centered around the fundamental frequency of the interferometry phenomenon. These filtered signals are monitored as standard and the trench formation parameters such as the SiO.sub.2 redeposited layer thickness and the trench depth are accurately measured in real time to allow an accurate determination of the etch end point. It is worthwhile to have the optical emission of the plasma viewed by another spectrometer to generate a second primary signal S* that is used to validate the parameter measurements.

Method for real-time in-situ monitoring of a trench formation process

Detecting the desired etch end point in the dry etching of a structure that includes a dielectric film formed onto a substrate down to a given thickness Ef. The structure is placed in the chamber of an etching equipment provided with a view-port. A light source illuminates a portion of the structure at a normal angle of incidence through the view-port. The light contains at least two specified wavelengths (L1, L2) whose value is greater than a minimum value equal to 4*N*e (wherein N is the index of refraction and e the thickness error of the dielectric). The reflected light is applied to spectrometers tuned to each specified wavelength, for converting the reflected light into interference signals that are processed and analyzed in a dedicated unit to generate primary signals (S1, S2). An analysis of the primary signals is performed after a predetermined delay. For each wavelength, a pre-selected extremum of the primary signal is detected and a predetermined number of extrema is counted. The counting stops when the last extremum just before Ef is reached. As a result, the distance D between the last extremum and the given thickness is now determined. The etch rate ER is also measured in-situ before the last extremum.

Apparatus for monitoring the dry etching of a dielectric film to a given

A device for monitoring the thickness of a low absorption thin film or layer (53B) on an at least partially reflecting substrate (31) placed inside a vacuum chamber (1) closed by a window (7), includes a polarized laser source (8), a polarizing cube (13), placed in the path of the laser beam, consisting of two right-angle prisms (13A, 13B) assembled by their hypotenuse faces by means of a dielectric film (13C), the cube being oriented so that the incident laser beam has a 45 degree angle of incidence with the film, the cube allowing a first part of the incident beam to pass into a first, linear optoelectronic converter (15A) supplying a first electrical signal (I.sub.oe), the cube reflecting a second part of the incident beam to pass through a quarter-wave plate (7, 7A) and reflect off the layer before returning through the cube, without being deflected, and thereafter striking a second converter (15B) supplying a second electrical signal (I.sub.e). The device further includes apparatus for finding the ratio of the second electrical signal to the second electrical signal, for correcting spurious light, or obtaining the derivative of the ratio, for calibrating the measuring head, and for supplying a signal when the derivative has remained, for a given amount of time, between two given values limiting a set point value for the desired thickness of the layer.

Device for monitoring the thickness of thin layers

An apparatus for producing preforms for the production of optical fibers by plasma coating and drawing. A plasma stream produced with the aid of a radio frequency generator is caused to successively pass through three zones in the first of which a mixture of fluidized powders of two materials of appropriate composition is injected and completely vaporized. In the second zone an oxidizing gas having a mixing action is introduced into the deeply cooled stream. The materials and gas react with each other to form microseeds. The powders contain high purity silicon and at least one doping element of the group comprising Al, Ge, B. Ti and Zr. In the third zone an inert gas is introduced and deposition of substance is effected on substrates suitably arranged with respect to the path followed by the plasma stream.

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Montlhery, France

Jean Canteloup