Thomson-csf

Jean C Resneau

Jean Doyen

Philippe Morel

Robert Ribier

Jean Puyhaubert

Marius Cirio

Claude Lamontagne

Evelyne Da Silva

A transmission-type electro-acoustic delay line comprises an acoustic medium delimited by a cylindrical lateral surface, a plane terminal surface on which are fixed two symmetrical transducers, and a focusing terminal surface in the form of a spherical cap. The angle formed by the plane surface and the axis of revolution of the spherical cap is less than 90.degree. by an angle such that the incident acoustic wave undergoes a single reflection on the focusing cap and such that the reflected acoustic wave is concentrated at the level of the output transducer.

Electro-acoustic delay line operating in transmission

A base comprising a metal mounting stud to which is fixed a locally metallized insulating plate of the beryllium oxide type. In order to very accurately position active or passive component or components on the insulating plate, at least one connecting electrode comprises at least one abutment zone against which is placed at least one component. This makes it possible to obtain a very good reproducibility of the electrical performances of the device. Such a mounting is applied to ultra-high frequency devices, particularly those incorporating a pre-matching circuit.

Base for encapsulating components with coplanar electrodes

A device for connecting in parallel high power transistors in very high frequency having a first plate serving as an electrical and thermal earth plane and a second electrically insulating plate supporting two metallized zones for connection respectively to the system of first parallel-connected electrodes of a transistor and a system of second parallel-connected electrodes of the same transistors, the third electrodes being connected to earth. The transistors, in the form of monolithic systems, are respectively placed on electrically insulating and thermally conductive plates welded to the first zone, while connecting the first electrodes to a first series of terminals and connecting the second electrodes to a second series of terminals. The metallized zones are respectively connected to the terminals of each series by conductors passing through the second electrically insulating plate, the transistors being inserted between the first and second plates.

Device for connecting in parallel power transistors in very high

A process of construction of a device for hermetic sealing in a case comprising a sealed ceramic crossover formed by a metal conductor, without having recourse to the technology of cast alumina, which is delicate and costly, and without using sealing glass which is undesirable for very high frequencies. The process comprises the manufacture of molded parts by pressing green alumina to which binders have been added, so as to obtain a case bottom and a frame, which is metalized only after previous firing at 1000.degree. C., using the molybdenum-manganese deposit by silk-screen printing, then which is sintered at the normal temperature of alumina at 1500.degree. C.

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Paris, France

Jean C Resneau