Samsung Electronics Co., Ltd.

Seoul National University

Jea-Shik Shin

In-sang Song

Yun-kwon Park

Moon-chul Lee

Chul-soo Kim

Duck-hwan Kim

Woon-bae Kim

Eun-sung Lee

Jong-oh Kwon

Jun-sik Hwang

Seok-chul Yun

Sang-Chul Sul

Kuang-Woo Nam

Seok-Mo Chang

Sang-Wook Kwon

Jong-seok Kim

Kyu-Dong Jung

Young-tack Hong

Hae-seok Park

Dong-ha Shim

Kook-hyun Sunwoo

Yong-Kweon Kim

Yong-Seung Bang

An array variable capacitor apparatus includes a line unit including a ground line and a signal line which operates as a lower electrode; and a plurality of plates which are engaged with the line unit to generate capacitance and which operate as upper electrodes, the plurality of plates being arranged in an array pattern and having different degrees of stiffness.

Array variable capacitor apparatus

An inductor embedded in a substrate, including a substrate, a coil electrode formed by filling a metal in a spiral hole formed on the substrate, an insulation layer formed on the substrate, and an external connection pad formed on the insulation layer to be connected to the coil electrode. The inductor-embedded substrate can be used as a cap for a micro device package by forming a cavity on its bottom surface.

Inductor embedded in substrate, manufacturing method thereof, micro device package, and manufacturing method of cap for micro device package

A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.

Tunable resonator using film bulk acoustic resonator (FBAR)

An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.

Integrated filter including FBAR and saw resonator and fabrication method therefor

A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

Monolithic duplexer and fabrication method thereof

A balance filter packaging chip having a balun mounted therein and a manufacturing method thereof are provided. The balance filter packaging chip includes a device substrate; a balance filter mounted on the device substrate; a bonding layer stacked on a certain area of the device substrate; a packaging substrate having a cavity formed over the balance filter, and combined with the device substrate by the bonding layer; a balun located on a certain area over the packaging substrate; and an insulator layer for passivating the balun. Accordingly, the present invention can reduce an element size and simplify a manufacturing process.

Balance filter packaging chip having balun mounted therein and manufacturing method thereof

Growing community of inventors

Suwon-si, South Korea

Jea-Shik Shin