Sandisk Technologies Inc.

Fusion-Io, Inc.

Intelligent Intellectual Property Holdings 2 LLC

Other

Jea Hyun

Robert Barry Wood

Hairong Sun

John Strasser

James G Peterson

David Flynn

Rick Lucky

Jeremy David Fillingim

David Nellans

Hao Zhong

Gary Janik

Long C Pham

Kapil Verma

Ryan Haynes

Charla Mosier

Barrett Edwards

Jim Peterson

Ned Plasson

Warner Losh

Mark Brinicombe

Joshua Perschon

Josh Perschon

Apparatuses, systems, and methods are disclosed for managing configuration parameters for non-volatile data storage. A control module is configured to limit erase dwell times for blocks of a non-volatile memory medium to satisfy a threshold. A block classification module is configured to group blocks of a non-volatile memory medium based on retention times for the blocks. A block access module is configured to access at least one group of blocks using a read voltage threshold selected based on a grouping.

Configuration parameter management for non-volatile data storage

Apparatuses, systems, methods, and computer program products are disclosed for interrupting storage operations. An integrated circuit chip comprising non-volatile memory, the integrated circuit chip configured to, determine a number of portions into which a storage operation is to be split; pause execution of the storage operation from within the integrated circuit chip according to the determined number of portions; execute one or more other storage operations on the integrated circuit chip while the storage operation is paused, each of the one or more other storage operations having a shorter duration than the storage operation; and continue the paused storage operation in response to a trigger.

Storage operation interrupt

Apparatuses, systems, methods, and computer program products are disclosed for on die buffered non-volatile memory management. A method includes storing data in a first set of non-volatile memory cells. A method includes determining one or more attributes associated with data. A method includes determining whether to store data in a second set of non-volatile memory cells based on one or more attributes. A second set of non-volatile memory cells may be configured to store more bits per cell than a first set of non-volatile memory cells.

Selective copyback for on die buffered non-volatile memory

Apparatuses, systems, methods, and computer program products are disclosed for distributing error-correction codes. A correction module is configured to determine an error correction code (ECC) code word for storage on one or more non-volatile storage media. A mapping module is configured to determine one or more addresses for the ECC code word so that a portion of the ECC code word is stored at a first physical address within a first set of strings of storage cells of the one or more non-volatile storage media and a portion of the ECC code word is stored at a different physical address within a second set of strings of storage cells of the one or more non-volatile storage media. A storage module is configured to cause the ECC code word to be stored in the one or more non-volatile storage media based on the determined one or more addresses.

Distributing storage of ECC code words

Apparatuses, systems, methods, and computer program products are disclosed for interrupting storage operations. A frequency module is configured to determine a frequency for pausing a storage operation. An interrupt module is configured to pause execution of a storage operation according to a determined frequency. A resume module is configured to continue a paused storage operation in response to a trigger.

Apparatuses, systems, methods, and computer program products are disclosed for model based configuration parameter management. An association module is configured to group a plurality of erase blocks of a non-volatile memory medium based on an amount of time since data has been written to the plurality of erase blocks. A read module is configured to sample data of at least two word lines from at least one erase block from each of a plurality of groups of erase blocks. A configuration parameter module is configured to determine different read voltage thresholds for different word lines of groups of erase blocks using different read voltage threshold models for different groups based on sampled data.

Model based configuration parameter management

Apparatuses, systems, and methods are disclosed for managing configuration parameters for non-volatile data storage. A control module is configured to manage differences in one or more storage characteristics for blocks of a non-volatile memory medium within one or more established limits. A block classification module is configured to group blocks of a non-volatile memory medium based on one or more other storage characteristics. A configuration parameter module is configured to use a configuration parameter for at least one group of blocks based on a grouping. A configuration parameter update module is configured to update a configuration parameter for at least one group in response to a change in one or more managed storage characteristics.

Apparatuses, systems, methods, and computer program products are disclosed for storage operations for a non-volatile medium. A control module may be configured to divide a storage procedure into multiple portions. An execution module may be configured to execute multiple portions of a storage procedure independently. A storage request module may be configured to satisfy a storage request for one or more storage elements of a storage procedure between at least a pair of portions of a storage procedure.

Dividing a storage procedure

Apparatuses, systems, methods, and computer program products are disclosed for reduced level cell solid-state storage. A method includes determining that an erase block of a non-volatile storage device is to operate in a reduced level cell (RLC) mode. The non-volatile storage device may be configured to store at least three bits of data per storage cell. A method includes instructing the non-volatile storage device to program first and second pages of the erase block with data. A method includes instructing the non-volatile storage device to program a third page of the erase block with a predefined data pattern. Programming of a predefined data pattern may be configured to adjust which abodes of the erase block are available to represent stored user data values.

Reduced level cell mode for non-volatile memory

Apparatuses, systems, methods, and computer program products are disclosed for on die buffered non-volatile memory management. A method includes storing data in a first set of non-volatile memory cells. A method includes determining whether to perform an error-correcting code (ECC) refresh for data to be copied from a first set of non-volatile memory cells to a second set of non-volatile memory cells based on one or more attributes associated with the data. A method includes storing data in a second set of non-volatile storage cells representing data using more storage cells per cell than a first set of non-volatile storage cells.

Selective ECC refresh for on die buffered non-volatile memory

Apparatuses, systems, and methods are disclosed for a read operation for a non-volatile memory. A method includes determining whether one or more non-volatile storage cells satisfy a predefined condition. A method includes preparing the one or more non-volatile storage cells for use prior to satisfying a read request from a storage client using the one or more non-volatile storage cells in response to determining that a predefined condition is satisfied.

Read operation for a non-volatile memory

Apparatuses, systems, methods, and computer program products are disclosed for controlling a read time of an electronic memory device. A method includes reading data from an integrated circuit of storage using a read time for the integrated circuit of storage. A method includes adjusting a read time for an integrated circuit of storage. A method includes reading data from a same integrated circuit of storage using an adjusted read time for the integrated circuit of storage.

Adjustable read time for memory

Apparatuses, systems, and methods are disclosed for managing configuration parameters for non-volatile data storage. An initialization module is configured to initialize a value for a configuration parameter for a set of cells of a non-volatile memory medium. The initialization module may initialize the configuration parameter value based on a predetermined model for the set of cells. An update module is configured to adjust the configuration parameter using an existing function of the non-volatile memory medium. The existing function may use the initialized value to adjust the configuration parameter. The update module may adjust the configuration parameter in response to a trigger. An access module is configured to access the set of storage cells using the adjusted configuration parameter.

Configuration parameter management using a configuration tool

Methods, storage controllers, and systems for non-volatile storage element programming are described. One method includes programming user data in pages associated with a set of wordlines of an erase block of a non-volatile, solid-state storage element. The method further includes selecting at least one of the wordlines of the set programmed with the user data and restricting further programming of user data in the pages associated with the selected wordline. In some embodiments, the selected wordline occurs subsequent to the pages associated with the other wordlines of the set in a page programming order for the erase block.

Apparatus, system, and method for non-volatile storage element programming

Apparatuses, systems, methods, and computer program products are disclosed for detecting voltage threshold drift. A method includes programming a predetermined pattern to one page of at least three pages of a set of memory cells. A pattern may have a configuration to reduce a number of bit transitions between abodes of a set of memory cells based on a coding scheme for the set of memory cells. A method includes reading data from a different page of at least three pages. A method includes determining a direction for adjusting a read voltage threshold for a set of memory cells based on read data.

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South Jordan, UT, United States of America

Jea Hyun