Industry-University Cooperation Foundation Hanyang University

Siltron, Inc.

Other

Iucf-hyu

Industrial Bank of Korea

Jea Gun Park

Jea-Gun Park

Gon-Sub Lee

Sang-Hee Lee

Jin-Hyung Park

Jae-Hyung Lim

Jong-Young Cho

Hee-Sub Hwang

Tae-Hyun Kim

Ho Sam Choi

Un-gyu Paik

Seung-hyun Song

Ye-hwan Kim

Hao Cui

Dal-Ho Kim

Ji-Heon Kim

Tae-Hun Shim

Seong-Je Kim

Jong-Wan Park

An image sensor and an operating method thereof are disclosed. The image sensor includes a first photoelectric conversion portion configured to receive plural lights, except for a light of first wavelength, to generate an electric charge; and a second photoelectric conversion portion configured to receive the light of the first wavelength to generate an electric charge, wherein at least a portion of the first photoelectric conversion portion and the second photoelectric conversion portion is spaced apart from each other in a vertical direction.

Image sensor and method for driving same

Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.

Multi-selective polishing slurry composition and a semiconductor element production method using the same

The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.

CMP slurry composition for tungsten

Provided is a capacitorless memory device. The device includes a semiconductor substrate, an insulating layer disposed on the semiconductor substrate, a storage region disposed on a partial region of the insulating layer, a channel region disposed on the storage region to provide a valence band energy offset between the channel region and the storage region, a gate insulating layer and a gate electrode sequentially disposed on the channel region, and source and drain regions connected to the channel region and disposed at both sides of the gate electrode. A storage region having different valence band energy from a channel region is disposed under the channel region unit so that charges trapped in the storage region unit cannot be easily drained. Thus, a charge retention time may be increased to improve data storage capability.

Capacitor-less memory device

The present invention relates to a flexible single-crystal film and a method of manufacturing the same from a single-crystal wafer. That is, the present invention can manufacture a silicon-on-insulator (SOI) wafer comprising a base wafer, one or more buried insulator layers, and a single-crystal layer into a flexible single-crystal film with a desired thickness by employing various wafer thinning techniques. The method for manufacturing a flexible film comprises the steps of (i) providing a SOI wafer comprising a base wafer, one or more buried insulator layers on the base wafer, and a single-crystal layer on said one or more buried insulator layers, (ii) forming one or more protective insulator layers on said single-crystal layer, (iii) removing said base wafer, and (iv) removing one or more of the insulator layers.

Flexible single-crystal film and method of manufacturing the same

A method of fabricating a nano silicon on insulator (SOI) wafer having an excellent thickness evenness without performing a chemical mechanical polishing (CMP) and a wafer fabricated by the same are provided. The provided method includes preparing a bond wafer and a base wafer, and forming a dielectric on at least on surface of the bond wafer. Thereafter, an impurity ion implantation unit is formed by implanting impurity ions into the bond wafer to a predetermined depth from the surface of the bond wafer at a low voltage. The dielectric of the bond wafer and the base wafer contact each other in order to be bonded. Next, a thermal process of low temperature is performed to cleave the impurity ion implantation unit of the bond wafer. In addition, the cleaved surface of the bond wafer bonded to the base wafer is etched to form a nano scale device region. Here, the cleaved surface may be etched by performing a hydrogen surface process and a wet etching.

Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same

Growing community of inventors

Gyeonggi-do, South Korea

Jea-Gun Park