Industry-University Cooperation Foundation Hanyang University

Iucf-Hyu

Sumco Corporation

K. C. Tech Co., Ltd.

Samsung Electronics Co., Ltd.

Hyundai Motor Company

Hanyang Hak Won Co., Ltd.

Wise Automotive Corporation

Hannam University Institute-Academia Corporation

Jea Gun Park

Du Yeong Lee

Seung Eun Lee

Tae Hun Shim

Jong Ung Baek

Jae Hyoung Shim

Seung Jae Lee

Ji Eun Lee

Jin Young Choi

Il Hwan Kim

Min Su Jeon

Seung Hyun Song

Takeo Katoh

Sung Ho Seo

Chang Jin Lee

Un Gyu Paik

Dae Hyeong Kim

Jun Seong Park

Woo Sik Nam

Tea Hun Shim

Han Sol Jun

Dal Ho Kim

Dong Won Kim

Sang Kyun Kim

Yong Kim

Hae Yun Kwon

Ji Ho Choi

Jin Seong Park

Eiji Kamiyama

Tae-Dong Kim

Ji Heon Kim

Hyun Gyu Lee

Won Mo Lee

Jong Dae Lee

Kwang-sup Lee

Seok Min Hong

Dong Won Shin

Jae Hyun Jeon

Sun Hwa Jung

Joo Hyoung Park

Ye Hwan Kim

Dong Eon Kim

Jae Woo Shin

Jae Un Lee

Song Hwa Hong

Junli Li

Sung Jun Kim

Kei Ashiba

Kondo Kei

Xuefeng Jin

Su Hwan Lee

Heong Sub Oh

Hyun Goo Kang

Jong Sun Lee

Un Gyu Park

Gon Sub Lee

Mi Ri Park

Hyun Min Seung

Dong Gi Lee

Sung Mok Jung

Myoung Won Suh

Seo Yun Kim

Soo Min Jin

Hea Jee Kim

Yun Hyuk Koh

Sang Hong Park

Min Won Kim

Dae Seong Woo

The present invention discloses a neuron and a neuromorphic system including the same. The neuron according to an embodiment of the present invention includes a two-terminal spin device for performing integration and fire, and the two-terminal spin device is formed to have a negative differential resistance (NDR) region in which current decreases as voltage increases.

Neuron and neuromorphic system including the neuron

The present invention discloses a selection device and a memory device including the same. The selection device according to an embodiment of the present invention has high reliability and a high selection ratio. Accordingly, when the selection device is used, a highly integrated memory cell capable of selecting a desired cell without leakage current may be provided.

Selection device and memory device using the same

The present invention relates to technology for fabricating a gallium nitride substrate using an ion implantation process to which a self-separation technique is applied. According to the present invention, a method of fabricating a gallium nitride substrate may include a step of forming a first gallium nitride layer on a substrate, a step of implanting hydrogen ions into the first gallium nitride layer to form a separation layer, a step of grinding the edges of the substrate, the first gallium nitride layer, and the separation layer, a step of forming a second gallium nitride layer on the first gallium nitride layer having a ground edge, and a step of self-separating the second gallium nitride layer from the first gallium nitride layer having a ground edge.

Method of fabricating gallium nitride substrate using ion implantation

Disclosed is a memory device including a lower electrode, a seed layer, a synthetic antiferromagnetic layer, a magnetic tunnel junction, and an upper electrode laminated on a substrate, wherein the magnetic tunnel junction includes a pinned layer, a tunnel barrier layer, and free layers, wherein the free layers include a first free layer, a spacer layer, a coupling layer, a buffer layer, and a second free layer laminated in sequential order.

Memory device containing magnetic tunnel junction

An organic light-emitting display device includes quantum dots and an RGB color filter layer having quantum dots and thus is capable of removing 100% of interference among red, green, and blue color filters.

Organic light-emitting display device including quantum dots

A selector according to an embodiment of the present disclosure includes a first electrode; a second electrode disposed opposite to the first electrode; an ion supply layer disposed between the first electrode and the second electrode to be on the side of the first electrode and doped with a metal, wherein the doped metal diffuses toward the second electrode; a switching layer disposed between the first electrode and the second electrode to be on the side of the second electrode, wherein the doped metal diffuses from the ion supply layer into the switching layer so that metal concentration distribution inside the switching layer is changed to generate metal filaments; and a diffusion control layer inserted between the ion supply layer and the switching layer, wherein the diffusion control layer serves to adjust electrical characteristics related to the generated metal filaments as the amount of the diffusing metal is adjusted in proportion to a thickness of the diffusion control layer.

Selector and memory device using the same

Disclosed are quantum dots based on a graded multishell structure and a method of manufacturing the same. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core, inter shells surrounding the core, and an outer shell surrounding the inter shells, wherein the concentrations of compounds composing the inter shells are changed stepwise from the core to the outer shell.

Quantum-dot based on graded-shell structure and manufacturing method of the same

Disclosed are quantum dots including a luminescent dopant. More particularly, each of the quantum dots according to an embodiment of the present invention includes a core and a shell surrounding the core, wherein at least one of an interior of the core and an interface between the core and the shell is doped with a luminescent group I dopant.

Quantum-dot based on multi-shell structure including luminescent dopant

The present invention discloses an image sensor including a quantum dot layer. The image sensor including a quantum dot layer according to the present invention includes photoelectric conversion elements formed on a substrate to correspond to a plurality of pixel regions; a wiring layer formed on the substrate on which the photoelectric conversion elements are formed; color filters formed on the wiring layer to correspond to the photoelectric conversion elements; and a quantum dot layer formed on the color filters and absorbing light and emitting visible light having a specific range of wavelengths converted from the absorbed light.

Image sensor including quantum dot layer

Disclosed is a memory device including a multi-bit perpendicular magnetic tunnel junction, wherein the multi-bit perpendicular magnetic tunnel junction includes an upper synthetic antiferromagnetic layer, pinned layer, lower dual free layer, and upper free layer formed in a laminated manner between a top electrode and a bottom electrode.

Memory device based on multi-bit perpendicular magnetic tunnel junction

The present invention discloses a dual image sensor. The dual image sensor according to one embodiment of the present invention includes first and second image sensor modules mounted on a printed circuit board, wherein the first image sensor module includes a first housing mounted on the printed circuit board; a first image sensor mounted on the printed circuit board and formed on a first surface of the first housing; and a first lens formed on a second surface of the first housing, and the second image sensor module includes a second housing mounted on the printed circuit board; a second image sensor mounted on the printed circuit board and formed on a first surface of the second housing; a second lens formed on a second surface of the second housing; and a quantum dot layer formed between the second image sensor and the second lens and absorbing ultraviolet light and emitting visible light converted from the absorbed ultraviolet light.

Dual image sensor including quantum dot layer

Disclosed is a memory device. A memory device according to an embodiment of the present invention includes a memory device including a substrate; and a lower electrode, seed layer, lower synthetic antiferromagnetic layer, magnetic tunnel junction, upper synthetic antiferromagnetic layer, and upper electrode that are laminated on the substrate, wherein the magnetic tunnel junction includes a lower pinned layer, lower tunnel barrier layer, lower free layer, separation layer, upper free layer, upper tunnel barrier layer and upper pinned layer that are sequentially laminated.

Multi-bit magnetic memory device

The present disclosure provides a neuromorphic device and a method of driving the same. The neuromorphic device of the present disclosure includes a channel, the magnetization direction of which is changed as a plurality of data is integrated, first and second magnetization regulators formed on both ends of the channel and responsible for changing the magnetization direction of the channel according to a plurality of input data, and a controller formed on the channel between the first and second magnetization regulators and responsible for firing data equal to or greater than a critical value integrated in the channel.

Neuromorphic device and method of driving the same

A memory device contains lower electrodes, a buffer layer, a seed layer, a magnetic tunnel junction, a capping layer, synthetic antiferromagnetic layers, and an upper electrode, which are formed on a substrate in a laminated manner. In the memory device, the lower electrodes and the seed layer are formed of a polycrystalline conductive material, and the perpendicular magnetic anisotropy of the magnetic tunnel junction is maintained upon heat treatment at a high temperature of 400&#xb0; C. or more.

Memory device

The present invention provides a solar cell and a method for manufacturing the same, the solar cell including a first electrode formed on a substrate, a nanocrystal layer including a plurality of nanocrystals formed on the first electrode so as to contact the first electrode, a hole transport layer formed on the first electrode so as to cover the plurality of nanocrystals, a photoactive layer formed on the hole transport layer, and a second electrode formed on the photoactive layer.

Solar cell and manufacturing method therefor

Growing community of inventors

Seongnam-si, South Korea

Jea Gun Park