Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Corporation

Seoyon E-hwa Co., Ltd.

Je Woo Han

Chan Hoon Park

Jong Woo Sun

Jae Hong Park

Jun Ho Yoon

Won Chul Lee

Masayuki Tomoyasu

Sung Yeon Kim

Ho Chang Lee

Kwang Nam Kim

Sung Moon Park

Young Hoon Jeong

Seul Ha Myung

Yong Moon Jang

Seung Yoon Song

Jung Mo Sung

Seong Chan Kim

Hee Keun Kim

A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Substrate processing apparatus and method of processing a substrate

A storage system for a vehicle door may include: a vehicle door; a map pocket assembly movable with respect to the vehicle door; and a guide mechanism guiding a movement of the map pocket assembly, wherein a storage compartment is defined between the map pocket assembly and the vehicle door.

Storage system for vehicle door

A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

Apparatus for manufacturing semiconductor device and manufacturing method of semiconductor device

Substrate processing apparatus including edge ring

Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Method of fabricating semiconductor devices

Growing community of inventors

Hwaseong-si, South Korea

Je Woo Han