Tsinghua University

Je-Min Hung

Meng-Fan Chang

Jian-Wei Su

Ping-Chun Wu

Jin-Sheng Ren

Chuan-Jia Jhang

A memory structure with input-aware maximum multiply-and-accumulate value zone prediction for computing-in-memory applications includes a memory array, an input-aware zone prediction circuit and an analog-to-digital converter. An input-aware maximum partial multiply-and-accumulate value voltage generator is configured to generate a maximum partial multiply-and-accumulate value according to at least one input value. A prediction-aware global reference voltage generator is configured to generate a plurality of global reference voltages, a maximum reference voltage and a selected minimum reference voltage. A maximum partial multiply-and-accumulate value zone detector is configured to generate a zone switch signal by comparing the maximum partial multiply-and-accumulate value and the global reference voltages. The analog-to-digital converter is configured to convert an analog multiply-and-accumulate output value of the memory array to a digital multiply-and-accumulate output value according to the maximum reference voltage, the selected minimum reference voltage and the zone switch signal.

Memory structure with input-aware maximum multiply-and-accumulate value zone prediction for computing-in-memory applications and operating method thereof

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Hsinchu, Taiwan

Je-Min Hung