Sungkyunkwan University

Je Jun Lee

Jin Hong Park

Jae Woong Choi

Ju Hee Lee

A semiconductor device with multiple zero differential transconductance includes: a conductive substrate; a first insulating layer and a second insulating layer disposed on the conductive substrate; a first semiconductor and a second semiconductor disposed on first portions of the first insulating layer and the second insulating layer, respectively; a first buffer layer and a second buffer layer disposed on electrode contact areas of the first semiconductor and the second semiconductor, respectively; and an anode electrode and a cathode electrode disposed on second portions, which are different from the first portions, of the first insulating layer and the second insulating layer and on the first buffer layer and the second buffer layer, respectively, wherein the first semiconductor and the second semiconductor are disposed in parallel with each other and connected by the anode electrode and the cathode electrode.

Growing community of inventors

Suwon-si, South Korea

Je Jun Lee