Skhynix Inc.

Hynix Semiconductor Inc.

Samsung Electronics Co., Ltd.

Je Il Ryu

Duck Ju Kim

Young-Gu Jin

Tae-Chan Kim

You Sung Kim

Tae-Yon Lee

Tae-Seok Oh

Dong Ki Min

Kwang-Hyun Lee

Yoon Dong Park

Sang-Chul Sul

Ju Hwan Jung

Seok Yong Hong

Pil Seon Yoo

Junw Seop Jung

A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.

Binary CMOS image sensors, methods of operating same, and image processing systems including same

A voltage select circuit includes a plurality of first transfer elements configured to transfer respective operating voltages to a first output terminal, a transfer select circuit unit configured to output a first voltage necessary to transfer an operating voltage, selected from among the operating voltages, to at least one first transfer element in response to a plurality of enable signals, and a control circuit configured to boost the first voltage to a second voltage in response to the plurality of enable signals.

Voltage select circuit and intergrated circuit including the same

A high voltage generation circuit includes a plurality of pumps configured to generate a final pump voltage, a plurality of switches configured to couple the pumps to various nodes, a voltage division circuit configured to divide the final pump voltage from the pumps interconnected by the switches, and outputting a divided voltage, a section signal generation circuit configured to generate a plurality of section signals by comparing the divided voltage with each of different reference voltages, and a section signal combination circuit configured to generate enable signals for controlling the switches by combining the section signals.

High voltage generation circuit and semiconductor device including the same

A regulator includes a current path unit coupled between an input terminal and a ground terminal and including a first current determination unit coupled between the input terminal and a control node and configured to supply the high voltage to the control node so that a first or second current path is selected depending on a voltage of the control node, and a second current determination unit coupled between the control node and the ground terminal and configured to control the voltage of the control node depending on an input voltage, a voltage supply unit configured to supply the high voltage to an output terminal depending on the voltage of the control node, a voltage division unit configured to create a division voltage, and an amplification unit configured to amplify a difference between the division voltage and a first reference voltage.

Regulator and high voltage generator including the same

A non-volatile memory device includes a plurality of memory blocks, first block switches configured to correspond to the respective odd-numbered memory blocks of the plurality of memory blocks and couple the word lines of the odd-numbered memory blocks and first local lines, second block switches configured to correspond to the respective even-numbered memory blocks of the plurality of memory blocks and couple the word lines of the even-numbered memory blocks and second local lines, a local line switch unit configured to selectively couple the first local lines or the second local lines and global word lines, and a high voltage generator configured to supply operating voltages to the global word lines.

Non-volatile memory device

A semiconductor circuit includes a control signal generation circuit configured to generate control signals in response to a voltage characteristic determination signal and a reference voltage generation circuit configured to output a main reference voltage, having one of a first characteristic of being proportional to temperature, a second characteristic of being constant irrespective of temperature, and a third characteristic of being inversely proportional to temperature, in response to the control signals.

Semiconductor circuit for outputting reference voltages

A semiconductor device includes a high voltage generator for generating a high voltage by raising a power source voltage, a transfer circuit for transferring the high voltage to an internal circuit in response to a transfer signal, and a first discharge circuit for discharging the high voltage of an output node of the high voltage generator or the high voltage of an input node or output node of the transfer circuit when the power source voltage drops.

Semiconductor device

A voltage supply circuit includes a high voltage generator configured to generate an operating voltage, a global word line switch configured to transfer the operating voltage to global word lines, a plurality of local line switches coupled to the global word lines and configured to transfer the operating voltage to corresponding local word lines, a precharge unit configured to supply a precharge voltage to an unselect local line switch adjacent to a select local line switch to which the operating voltage will be supplied, from among the plurality of local line switches, in a preparation section before an operation is started, and a coupling unit configured to couple the unselect local line switch and the global word line switch when the operation is started.

Voltage supply circuit, semiconductor memory device, and operating method thereof

A voltage supply circuit includes, inter alia, a clock generator, a negative voltage pump, a level shifter, a clock controller, and a pump circuit. The clock generator generates a first clock swinging between a positive voltage and a ground voltage. The negative voltage pump generates a negative voltage. A level shifter shifts the first clock by the negative voltage to output a second clock swinging between the negative voltage and the ground voltage. The clock controller generates a third clock by inverting the second clock and also generates a fourth clock by inverting the third clock. The pump circuit generates a high voltage according to the third and fourth clocks.

Semiconductor apparatus voltage supply circuit

A nonvolatile memory device and a method of programming the device includes a memory cell array configured to have a number of memory cells, a row decoder coupled to the memory cells through word lines, page buffers coupled to the memory cells through bit lines, and a control unit configured to output correction voltages for reducing a difference in voltage between a selected one of the word lines and a channel region of a selected one of the memory cells in response to a program operation being performed.

Nonvolatile memory device and method of programming the same

Various embodiments of a semiconductor apparatus are disclosed. In one exemplary embodiment, the semiconductor apparatus may include an internal voltage generation unit configured to generate an internal voltage having a voltage level corresponding to a code value of a voltage control code, a voltage comparison unit configured to compare a voltage level of a target voltage with a voltage level of the internal voltage, and a voltage control code generation unit configured to adjust the code value of the voltage control code based on the comparison result of the voltage comparison unit.

Semiconductor apparatus

A block decoder of a semiconductor memory device includes a control signal generation circuit configured to output a control signal in response to a first address mixing signal, a second address mixing signal, and an enable period signal and a block selection signal generation circuit configured to generate a block selection signal for selecting a memory block in response to the control signal.

Block decoder of semiconductor memory device

A high voltage generation circuit includes a clock logic unit configured to generate a switch clock signal and a pump clock signal, that has a varying frequency, in response to an input signal, a high voltage unit configured to generate a high voltage in response to the pump clock signal, a high voltage switch configured to output a selection signal in response to the switch clock signal, and a switching element configured to transfer the high voltage, generated by the high voltage unit, to an output node in response to the selection signal.

Voltage generation circuit and nonvolatile memory device including the same

A block decoder increases the integration level of a flash memory device by reducing the number of control signals. Address signals are substituted with existing high voltage switch signals. The block decoder of a flash memory device includes a primary decoding unit and a secondary decoding unit. The primary decoding unit outputs a decoding signal in response to first and second address coding signals of a high voltage and first to third control signals. The secondary decoding unit outputs a control signal to control the potential of a block word line in response to the decoding signal and first and second pre-decoded signals.

Block decoder of a flash memory device

A temperature sensor that can be used in semiconductor devices includes a reference voltage generator for dividing a power supply voltage and outputting a reference voltage, a compare voltage generator for outputting compare voltages with different levels depending on a change of a control signal, a temperature voltage generator for generating a temperature voltage based on the reference voltage and a threshold voltage of a MOS transistor, and a comparator for comparing an amplified temperature voltage and the compare voltage.

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Seoul, South Korea

Je Il Ryu