Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Je-Hun Lee

Chang-Oh Jeong

Do-Hyun Kim

Beom-Seok Cho

Yang-Ho Bae

Ki-Won Kim

Woo-Geun Lee

Kap-Soo Yoon

Eun-Guk Lee

Pil-Sang Yun

Dong-Ju Yang

Young-Wook Lee

Seung-Ha Choi

Tae-Hyung Ihn

Sung-Jin Kim

Sung-Hoon Yang

Hye-Young Ryu

Jae-Hyoung Youn

Hee-Joon Kim

Young-Joo Choi

Kyung-Seok Son

Kyoung-Jae Chung

Dong-Hoon Lee

Jae-Ho Choi

Tae-sang Kim

Joo-han Kim

Hwa-Yeul Oh

Yong-Mo Choi

Byoung-June Kim

Hiroshi Okumura

Byung-Du Ahn

Jae-Woo Park

Jun-Young Lee

Bo-Sung Kim

Hong-Sick Park

Min-Seok Oh

Bong-Kyun Kim

Sung-wook Kang

Young-min Kim

Seung-Jae Jung

Sei-yong Park

Jun-Hyun Park

Jin-Hyun Park

Jae-kyeong Lee

Soon-Kwon Lim

Chong-Chul Chai

Chang-jung Kim

Sang-Gab Kim

Eun-Young Lee

Sung-Chul Kim

Sang-Yoon Lee

Jong-Moo Huh

Myung-Kwan Ryu

Kyung-bae Park

Byeong-Beom Kim

Dae-Hwan Kim

Byeong-Jin Lee

Jang-yeon Kwon

Joo-Ae Youn

Sun-Young Hong

Ji-sim Jung

Yong-Woo Jeon

Won-Suk Shin

Hee-Hwan Choe

Sung-Haeng Cho

Hee-Tae Kim

Eun-Hyun Kim

Sang-Won Shin

Sung-hoon Yang

So-Woon Kim

Yeon-Hong Kim

Ji-Hun Lim

Yeon-Keon Moon

Hong-Long Ning

Jin-Ho Hwang

Seong-Jin Lee

Chang-ob Jeong

Jin-kwan Kim

Yang-bo Bae

Jun-hyung Souk

Sun-young Hong

Eun-young Lee

A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.

Metal oxide protection structure of a semiconductor device

A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

Thin film transistor with a reaction layer creating oxygen vacancies in an oxide semiconductor

A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

Thin film transistor array substrate and method of manufacturing the same

Provided is a thin film transistor (TFT) that includes a first electrode on a substrate separated from a second electrode, an oxide semiconductor pattern on the second electrode including a channel region, a third electrode on the oxide semiconductor pattern, a first insulating layer on the substrate including the third electrode including first contact holes exposing a part of the first electrode, a part of the second electrode, and a part of the third electrode, a gate electrode on the first insulating layer and corresponding to a part of the oxide semiconductor pattern, a second insulating layer on the substrate including the gate electrode including a second contact hole corresponding to the first contact hole that exposes a part of the second electrode, and a pixel electrode on the second insulating layer electrically connected to the second electrode through the first contact hole and the second contact hole.

Thin film transistor and method of manufacturing the same

Provided is a thin film transistor array substrate, including a gate electrode, a gate insulating layer covering the gate electrode, a semiconductor pattern formed on the gate insulating layer and including a channel region overlapping the gate electrode, a source electrode and a drain electrode formed on the semiconductor pattern and facing each other with a first opening exposing the channel region therebetween, a first protective layer formed on the gate insulating layer to cover the source electrode, the drain electrode and the semiconductor pattern and a metal oxide layer formed along a surface of the first protective layer.

Thin film transistor array substrate and manufacturing method of the same

A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Thin film transistor panel having an etch stopper on semiconductor

A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.

Liquid crystal display and method of manufacturing the same

Thin film transistors with oxide semiconductor having low resistance patterns with oxygen deficiencies

A display substrate includes a gate electrode on a base substrate, an active pattern which overlaps the gate electrode and includes a metal oxide semiconductor, an insulation pattern on the active pattern, a source electrode which contacts the active pattern, a drain electrode which contacts the active pattern and is spaced apart from the source electrode, and a first passivation layer which covers the active pattern and the insulation pattern, and includes fluorine, where the active pattern includes a first portion which directly contacts the insulation pattern and overlaps the gate electrode and the insulation pattern, a second portion which contacts the first passivation layer and has an electrical conductivity substantially larger than that of the first portion, a third portion which contacts the first passivation layer, has an electrical conductivity substantially larger than that of the first portion and is spaced apart from the second portion.

Display substrate including a thin film transistor and method of manufacturing the same

A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gusing a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gand values of an interface state-density-function Dover the entire energy band in the band gap.

Method for calculating parameter values of thin-film transistor and apparatus for performing the method

A display substrate includes a substrate, a switching element, a pixel electrode, and a light sensing part. The switching element is disposed on the substrate and is electrically connected to a gate line and a data line. The pixel electrode is electrically connected to the switching element. The light sensing part is electrically connected to the switching element and the pixel electrode, and is configured to control a grayscale of a pixel according to a brightness of an external light. The pixel includes the pixel electrode.

Display substrate, method of manufacturing the same and display panel having the same

Growing community of inventors

Seoul, South Korea

Je-Hun Lee