Hkc Corporation Limited

Beihai Hkc Optoelectronics Technology Co., Ltd.

Chuzhou Hkc Optoelectronics Technology Co., Ltd.

Beihai Hkg Optoelectronicstechnology Co., Ltd.

Beihai Huike Photoelectrics Technology Co., Ltd.

Je-hao Hsu

En-tsung Cho

Haijiang Yuan

Yuming Xia

Wanfei Yong

Zhen Liu

Fengyun Yang

Hejing Zhang

Haoxuan Zheng

En-Tsung Cho

Lidan Ye

Jie Zhang

Song Sun

Qin Xiong

Jinsong Lu

Jie Ding

A method of fabricating an array substrate and an array substrate are disclosed. The array substrate includes a bonding portion, the bonding portion being fabricated by: providing a substrate, and forming a metal layer on the substrate; sequentially depositing a first and a second insulating layer material on the metal layer; etching the first and second insulating layer material respectively at a first etching rate and a second etching rate to form a first insulating layer having a first via hole and a second insulating layer having a second via hole, respectively, thus obtaining a composite insulating layer of a double-layer structure; forming on the composite insulating layer an electrode layer connected to the metal layer through the first and second via holes to form the bonding portion; where the first etching rate and the second etching rate are different, and the first and second via holes are arranged correspondingly.

Method of fabricating array substrate and array substrate thereof

A manufacturing method of a silicon nitride thin film, a thin film transistor, and a display panel are disclosed, the method including: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period; providing an inert gas thereinto for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor for a preset time period, and remaining the nitrogen supplying precursor for a preset time period; providing the inert gas for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.

Manufacturing method for silicon nitride thin film, thin film transistor and display panel

Disclosed is a manufacture method of the array substrate, including: sequentially forming a gate, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate, forming a photoetching mask on the metal layer, where thickness of the photoetching mask in a half exposure area of the mask plate is from 2000 Å to 6000 Å; etching the metal layer, the ohmic contact layer and the active layer outside a covering area of the photoetching mask; ashing the photoetching mask for a preset time with an ashing reactant, wherein the ashing reactant comprises oxygen, and the preset time is from 70 seconds to 100 seconds; and sequentially etching the metal layer, the ohmic contact layer and the active layer based on the ashed photoetching mask, and forming a channel region of the array substrate. The present disclosure further discloses an array substrate, and a display panel.

Manufacture method of array substrate, array substrate, and display panel

An array substrate, a method for manufacturing the array substrate, and a display panel are provided in the disclosure. The method for manufacturing the array substrate includes the following. A gate and a signal trace spaced apart from the gate are formed on a substrate. A gate insulation layer is formed on the substrate. An active layer to-be-processed is formed on the gate insulation layer. A first photoresist layer is formed on the active layer to-be-processed. The active layer to-be-processed is etched to form an active layer, where the first photoresist layer is on a side surface of the active layer away from the gate insulation layer. A second photoresist layer is formed on the gate insulation layer. The gate insulation layer is etched to define a through hole, where the through hole faces the signal trace.

Array substrate, method for manufacturing the same, and display panel

The present application discloses a manufacturing method of a silicon nitride thin film, a thin film transistor and a display panel, the method includes following steps: providing a silane precursor into an atomic layer deposition apparatus for a preset time period, and remaining the silane precursor for a preset time period after the provision; providing an inert gas into the atomic layer deposition apparatus for a preset time period for the first time, and purging the silane precursor; providing a nitrogen supplying precursor into the atomic layer deposition apparatus for a preset time period, and remaining the nitrogen supplying precursor for a preset time period after the provision; providing the inert gas into the atomic layer deposition apparatus for a preset time period for the second time, and purging the nitrogen supplying precursor; repeating for a preset number of times the steps of providing the silane precursor, providing the inert gas for the first time, providing the nitrogen supplying precursor and providing the inert gas for the second time to form the silicon nitride thin film.

The present application discloses a display panel and a manufacturing method therefor, and the method includes steps of: forming a photosensitive element layer, forming a light collimating layer on the photosensitive element layer, and forming an active light-emitting matrix layer on the light collimating layer; where the step of forming the light collimating layer includes: providing a metal substrate, putting the metal substrate into an electrolyte, and preparing a porous oxidized metal as the light collimating layer by a two-step oxidation method.

Display panel and manufacturing method therefor

Disclosed are an optical fingerprint sensor, a preparation method thereof and a display device. The optical fingerprint sensor includes: a substrate; and a sensor unit, disposed on the substrate and including a thin film transistor and a photosensor electrically connected to the thin film transistor, where the thin film transistor includes a source electrode, a drain electrode, a semiconductor layer, and a light shield layer formed over a channel region between the source electrode and the drain electrode and shielding the semiconductor layer exposed in the channel region.

Growing community of inventors

Beihai, China

Je-hao Hsu