Applied Materials, Inc.

Lam Research Corporation

Jayoung Choi

Qian Fu

Hailong Zhou

Mark Joseph Saly

Jeffrey W Anthis

Zhongkui Tan

Tong Liu

David Knapp

Yoko Yamaguchi

Wonchul Lee

Yasushi Ishikawa

Sangjun Park

Sung Jin Jung

Junkai He

Feng Qiao

Radhe Agarwal

Lisi Xie

Patrick Ponath

A method and system for etching high aspect ratio structures in a semiconducting processing chamber are disclosed herein. In one example, a method of patterning a substrate comprises etching the substrate to form a recess, depositing a passivation layer on sidewalls of the recess, treating the passivation layer, and etching the recess to a second depth. The substrate etch forms a recess to a first depth, the substrate having a mask layer disposed thereon. The treating of the passivation layer is for removal of a clogging material formed from an etch byproduct on the mask layer. The etching the recess to a second depth while maintaining a minimum variation of a recess sidewall width.

Method for etching high aspect ratio structures

A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.

Enhanced etch selectivity using halides

Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.

Directional deposition in etch chamber

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San Jose, CA, United States of America

Jayoung Choi