Intel Corporation

Purdue Research Foundation

Other

Apple Inc.

Jaydeep P Kulkarni

Muhammad M Khellah

James W Tschanz

Vivek K De

Bibiche M Geuskens

Dinesh Somasekhar

Carlos Alfonso Tokunaga

Anupama Ambardar Thaploo

Pascal A Meinerzhagen

Yong Shim

Iqbal Rajwani

Minki Cho

Amit R Trivedi

Ashoke Ravi

Kaushik Roy

Ganesh Balamurugan

Farhana Sheikh

Arijit Raychowdhury

Eric A Karl

Pascal Meinerzhagen

Tawfiq Musah

Tzu-Chien Hsueh

Keith A Bowman

Sudip Shekhar

Hamid-Reza S Bonakdar

Kyung-Hoae Koo

Muhammed M Khellah

Ankit Sharma

Andres Malavasi Mora

Abhishek R Appu

Altug Koker

Kamal Sinha

Tanay Karnik

Christopher B Wilkerson

Wenyin Fu

Bhushan M Borole

Alaa R Alameldeen

Jawad Nasrullah

Cyrille Dray

Pramod Kolar

Kelvin Kwan

Eric Kwesi Donkoh

Karthik Subramanian

Wei-Hsiang Ma

Andrea Bonetti

Subho Chatterjee

Described is a level-shifter that can save area between voltage domains with limited voltage differential, and further save power by steering current between two power supply rails. The level-shifter comprises: an input to receive a first signal between a first reference rail and a second reference rail; an output to provide a second signal the first reference rail and a third reference rail, wherein in a voltage level of the third reference rail is higher than a voltage level of the second reference rail, and wherein a voltage level of the first reference is lower than the voltage level of the second reference rail and the third reference rail; and a circuitry coupled to the input and the output, wherein the circuitry is to steer current from the third reference rail to the second reference rail.

Current steering level-shifter

Described is an apparatus which comprises: a controllable power gate coupled to an ungated power supply node and a gated power supply node; and a charge-pump circuit operable to be turned on and off according to a logic, wherein the charge pump circuit is coupled in parallel to the controllable power gate and also coupled to the ungated power supply node and the gated power supply node.

Apparatus and method for reducing

Methods and systems to provide a multi-Vcc environment, such as to selectively boost an operating voltage of a logic block and/or provide a level-shifted control to the logic block. A multi-Vcc environment may be implemented to isolate a Vmin-limiting logic block from a single-Vcc environment, such as to reduce Vmin and/or improve energy efficiency in the single-Vcc environment. The logic block may include bit cells of a register file, a low-level processor cache, and/or other memory system. A cell Vcc may be boosted during a read mode and/or write wordlines (WWLs) and/or read wordlines (RWLs) may be asserted with boost. A wordline decoder may include a voltage level shifter with differential split-level logic, and a dynamic NAND, which may include NAND logic, a keeper circuit, and logic to delay a keeper control based on a delay of the level shifter to reduce contention during an initial NAND evaluation phase.

Methods and systems to selectively boost an operating voltage of, and controls to an 8T bit-cell array and/or other logic blocks

In an embodiment, an apparatus includes: a repeater to receive an input signal at an input node and output an output signal at an output node; a dynamic header device coupled between the repeater and a supply voltage node; and a feedback device coupled between the output node and the dynamic header device to dynamically control the dynamic header device based at least in part on the output signal. Other embodiments are described and claimed.

System, apparatus and method for reducing voltage swing on an interconnect

A calculation circuit for calculating a transform of an input sequence may include a plurality of butterfly computation circuits configured to perform a plurality of butterfly computations and to produce a plurality of outputs during each of a plurality of computation stages, a wired routing network configured to route a first plurality of outputs of the plurality of butterfly computation circuits from a first computation stage of the plurality of computation stages as input to the plurality of butterfly computation circuits during a second computation stage of the plurality of computation stages according to a reconfigurable routing configuration, and routing control circuitry configured to modify the reconfigurable routing configuration for a third computation stage of the plurality of computation stages.

Fast Fourier transform architecture

Apparatuses, methods and storage media associated with single-ended sensing array design are disclosed herein. In embodiments, a memory device may include bitcell arrays, clipper circuitry, read merge circuitry, and a set dominant latch (SDL). The clipper circuitry may be coupled to a read port node of a first bitcell array of the bitcell arrays and a local bitline (LBL) node, the clipper circuitry to provide a voltage drop between the read port node and the LBL node. The read merge circuitry coupled to the clipper circuitry at the LBL node, the read merge circuitry to drive a value of a global bitline (GBL) node based on a value of the LBL node. The SDL coupled to the GBL node to sense the value of the GBL node. Other embodiments may be described and/or claimed.

Low swing bitline for sensing arrays

Some embodiments include apparatus and methods using a charge pump coupled to a first supply power node and a second supply power node. The charge pump is arranged to transfer charge from the first supply power node to the second supply power node during a first time interval and to transfer charge from the second supply power node to the first supply power node during a second time interval.

Bi-directional multi-mode charge pump

Embodiments include a resistor, coupled on a signal path, that includes one or more resistive memory elements, such as one or more magnetic tunnel junctions (MTJs). The resistance of the resistive memory elements may be digitally trimmable to adjust a resistance of the resistor on the signal path. The resistor may be incorporated into an analog or mixed signal circuit to pass an analog signal on the signal path. Other embodiments may be described and claimed.

Digitally trimmable integrated resistors including resistive memory elements

Described is an apparatus which comprises: a memory bit-cell; a local bit-line (LBL) coupled to the memory bit-cell via a read port device; a NAND gate circuitry coupled to the LBL; and a stack of keepers coupled to the LBL, wherein at least one transistor of the stack of keepers is controllable according to an output of the NAND gate circuitry, wherein the stack of keepers includes transistors with variable strength which are to be turned on overtime.

Aging aware dynamic keeper apparatus and associated method

Embodiments include circuits, apparatuses, and systems for voltage level shifter monitors. In embodiments, a voltage level shifter monitor may include a first signal generator to generate a signal in a first voltage domain, a second signal generator to generate a second signal in a second voltage domain, where the second digital signal corresponds to the first digital signal, a voltage level shifter replica circuit to convert the first digital signal from the first voltage domain to a third digital signal in the second voltage domain, and a comparison circuit to generate a digital error signal based at least in part on the second digital signal and the third digital signal. Other embodiments may be described and claimed.

Voltage level shifter monitor with tunable voltage level shifter replica circuit

Some embodiments include apparatuses and methods having non-volatile memory cells, a data line associated with a group of non-volatile memory cells of the non-volatile memory cells, a first transistor coupled to the data line and a node, a second transistor coupled to the node and an additional node, a pull-up component coupled to the node and a supply node, and an additional pull-up component coupled to the additional node and the supply node.

Memory device including encoded data line-multiplexer

An apparatus is described. The apparatus includes a semiconductor chip. The semiconductor chip includes a memory having multiple storage cells. The storage cells are to receive a supply voltage. The semiconductor chip includes supply voltage retention circuitry. The supply voltage retention circuitry is to determine a level of the supply voltage at which the storage cells are able to retain their respective data. The supply voltage retention circuitry is to receive the supply voltage during a stress mode of the supply voltage retention circuitry. The supply voltage retention circuitry is to more weakly retain its stored information than the storage cells during a measurement mode at which the level is determined.

Retention minimum voltage determination techniques

Growing community of inventors

Portland, OR, United States of America

Jaydeep P Kulkarni