Gm Global Technolgoy Operations, Inc.

Jayant K Bhagat

Joseph V Mantese

Adolph L Micheli

David B Hicks

David S Howarth

Martin C Steele

A semiconductor power device with bipolar regenerative switching characteristics provides insulated gate structures for controlling device turn-on and turn-off. Rapid turn-off is achieved in part by a lateral field effect pinch resistance and a vertical field effect pinch resistance produced by an electrically floating structure. The device is electrically isolated by layer of dielectric which allows it to be easily integrated with other circuit elements. The device can be controlled by low current and low positive voltages which provides for simpler interfacing and better electrical compatibility with other circuits in an automotive system. A method of manufactuing this device is also provided.

Method of fabricating a lateral dual gate thyristor

A method of producing a miniaturized, fixed volume, internal reference gas chamber comprising the pores of a porous material, suitable for use in a rapid response, highly precise, internal reference, solid electrolyte electrochemical-type oxygen sensor capable of detecting oxygen partial pressures in internal combustion engines operating within lean air/fuel mixtures is accomplished using a four step technique. A thin film layer of material is deposited onto a supporting substrate and patterned, said material comprises at least one component resistant to a subsequent removal step and at least one sacrificial component not resistant to the same subsequent removal step. The said material is then sealed everywhere except at an external orifice. The sacrificial component of said material is then decomposed and removed during a removal step, providing an interlocking network of porosity comprised within the porous component of said material. The internal reference gas chamber is positioned adjacent to the electrodes of the sense and pump cells comprised within the oxygen sensing device.

Automotive, internal reference, solid electrolyte, lean oxygen sensor

Method of producing a miniature internal reference gas chamber within an

A semiconductor power device with bipolar regenerative switching characteristics provides insulated gate structures for controlling device turn-on and turn-off. Rapid turn-off is achieved in part by a lateral field effect pinch resistance and a vertical field effect pinch resistance produced by an electrically floating structure. The device is electrically isolated by layer of dielectric which allows it to be easily integrated with other circuit elements. The device can be controlled by low current and low positive voltages which provide for simpler interfacing and better electrical compatibility with other circuits in an automotive system. A method of manufacturing this device is also provided.

Lateral dual gate thyristor and method of fabricating same

A rapid-response gas sensor for measuring the relative presence of a gas in a mixture of gases and its method of manufacture. The sensor is fabricated using microelectronics technology to form multiple thin-film solid-electrolyte pump and sense cells within a hermetically sealed sensor cavity.

Gas sensor and method of fabricating same

A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off. The anode region of the device is electrically shorted to its contiguous N-type region.

Insulated gate-controlled thyristor having shorted anode

A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off.

Insulated gate-controlled thyristor

Thyristor with turn-off FET

A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and self-aligned with functional regions.

Silicon nitride formation and use in self-aligned semiconductor device

In a preferred embodiment, the etch rate of a silicon-containing surface subjected to a RF discharge plasma containing reactive etching species is selectively affected by electrically insulating the surface from the plasma-generating RF power source and by applying to the surface a predetermined time-constant electrical potential. The applied potential apparently interacts with the plasma constituents in the immediate vicinity of the surface to alter the concentration of reactive species and thereby change the rate of attack of the plasma upon the surface. The applied potential, depending upon its polarity and strength, is useful to selectively increase or decrease the etch rate of the desired surface exposed to a predetermined plasma without significantly interfering with the overall RF plasma discharge.

Growing community of inventors

Troy, MI, United States of America

Jayant K Bhagat