Nanosys, Inc.

Shoei Chemical Inc.

Jay Yamanaga

Christian Justus Ippen

Charles Hotz

Shihai Kan

Jason T Hartlove

Robert E Wilson

Veeral Hardev

Jian Chen

Wenzhou Guo

Wenzhuo Guo

Chunming Wang

Ravisubhash Tangirala

Ashenafi Damtew Mamuye

Christopher Sunderland

Nahyoung Kim

Eunhee Hwang

Jian Feng Chen

Donald A Zehnder

John Joseph Curley

Xiaofeng Zhang

Disclosed are films comprising Ag In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm when excited using a blue light source with a wavelength of about 450 nm.

Films comprising bright silver based quaternary nanostructures

Disclosed are films comprising Ag, In, Ga, and S (AIGS) nanostructures and at least one ligand bound to the nanostructures. In some embodiment, the AIGS nanostructures have a photon conversion efficiency of greater than 32% and a peak wavelength emission of 480-545 nm. In some embodiments, the nanostructures have an emission spectrum with a FWHM of 24-38 nm.

Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method includes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.

Quantum dot encapsulation techniques

The invention relates to highly luminescent nanostructures with improved blue light absorbance, particularly core/shell nanostructures comprising a ZnSe core and InP and/or ZnS shell layers. The invention also relates to methods of producing such nanostructures.

Cadmium free reverse type 1 nanostructures with improved blue light absorption for thin film applications

The present disclosure provides nanostructure compositions and methods of producing nanostructure compositions. The nanostructure compositions comprise at least one population of nanostructures, at least one poly(alkylene oxide) ligand bound to the surface of the nanostructures, and optionally at least one organic resin. The present disclosure also provides nanostructure films comprising a nanostructure layer and methods of making nanostructure films.

Peg-based ligands with enhanced dispersibility and improved performance

Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Quantum dot based color conversion layer in display devices

Quantum dot based color conversion layer in display device

Growing community of inventors

Campbell, CA, United States of America

Jay Yamanaga