Tokyo Electron Limited

Applied Materials, Inc.

Varian Semiconductor Equipment Associates, Inc.

Tel Epion Corporation

7ac Technologies, Inc.

Jay R Wallace

Thomas Hamelin

Arthur H Laflamme, Jr

Kevin M Daniels

Costel Biloiu

Arthur Laflamme

Christopher W Campbell

Tyler Burton Rockwell

Frank Sinclair

Eric J Strang

Richard John Hertel

Kevin R Anglin

Ernest E Allen

Hiroyuki Takahashi

Kevin T Ryan

Joseph C Olson

Peter F Kurunczi

Peter Fransiscus Vandermeulen

Jack I Hanoka

Steven T Fink

Simon Ruffell

Shurong Liang

Matthew C Gwinn

Alexander C Kontos

Jeffrey E Krampert

Glen Gilchrist

Avrum Freytsis

Sandra L Hyland

Martin Kent

Tadashi Onishi

Stephen N Golovato

Louise Smith Barriss

Solomon Belangedi Basame

Minab B Teferi

Richard J Hertel

Charles R Launsby

Yoichi Kurono

Richard J Freeman

Mark Allen

An extraction assembly may include an extraction plate for placement along a side of a plasma chamber, and having an extraction aperture, elongated along a first direction, and having an aperture height, extending along a second direction, perpendicular to the first direction. The extraction plate defines an inner surface along the extraction aperture, lying in a first plane. A beam blocker is disposed over the extraction aperture, and has an outer surface, disposed in a second plane, different than the first plane. As such, the beam blocker overlaps with the extraction plate along a first edge of the extraction aperture by a first overlap distance, and overlaps with the extraction plate along a second edge of the extraction aperture by a second overlap distance, so as to define a first extraction slit, along the first edge, and a second extraction slit along the second edge.

Compact low angle ion beam extraction assembly and processing apparatus

A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

Substrate halo arrangement for improved process uniformity

A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Apparatus and system including high angle extraction optics

An ion beam processing system including a plasma chamber, a plasma plate, disposed alongside the plasma chamber, the plasma plate defining a first extraction aperture, a beam blocker, disposed within the plasma chamber and facing the extraction aperture, a blocker electrode, disposed on a surface of the beam blocker outside of the plasma chamber, and an extraction electrode disposed on a surface of the plasma plate outside of the plasma chamber.

Tunable extraction assembly for wide angle ion beam

An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave shape. As such, an extraction aperture may be arranged along a first surface of the central portion, where the first surface is oriented at a high angle with respect to the first side. The extraction plate may further include a patterned electrode, comprising a first portion and a second portion, affixed to an outer side of the insulator body, facing away from the plasma chamber, wherein the first portion is separated from the second portion by an insulating gap.

A gas injection system for an ion beam device, the gas injection system including an extraction plate, an extraction aperture formed in the extraction plate for allowing passage of an ion beam, a first gas distributor removably fastened to the extraction plate on a first side of the extraction aperture, the first gas distributor having a gas orifice formed therein, a second gas distributor removably fastened to the extraction plate on a second side of the extraction aperture opposite the first side, the second gas distributor having a gas orifice formed therein, a first gas conduit extending through the extraction plate between the first gas distributor and a gas manifold mounted to the extraction plate, and a second gas conduit extending through the extraction plate between the second gas distributor the gas manifold, and a residue removal gas source connected to the gas manifold.

Gas injection system for ion beam device

A gas injection system, including an extraction plate having an extraction aperture for allowing passage of an ion beam through the extraction plate, the extraction plate further having a gas slot for expulsion of a residue removal gas from the extraction plate. The gas injection system may include a gas conduit extending through the extraction plate between the gas slot and a gas manifold, a gas source connected in fluid communication with the gas manifold, the gas source containing the residue removal gas. The gas manifold may include a valve adjustable between a first position, wherein the residue removal gas is allowed to flow into the extraction plate, and a second portion, wherein the residue removal gas can be vented from the extraction plate. The gas injection system may further include a manifold cover coupled to the gas manifold.

Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

Scanner for GCIB system

A chemical oxide removal (COR) processing system is presented, wherein the COR processing system includes a first treatment chamber and a second treatment chamber. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber having a protective barrier. The second treatment chamber comprises a heat treatment chamber that provides a temperature-controlled chamber having a protective barrier.

Reduced maintenance chemical oxide removal (COR) processing system

A high throughput chemical treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment.

High throughput chemical treatment system and method of operating

A high throughput processing system having a chemical treatment system and a thermal treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in the chemical treatment system.

High throughput processing system for chemical treatment and thermal treatment and method of operating

A high throughput chemical treatment system for processing a plurality of substrates is described. The chemical treatment system is configured to chemically treat a plurality of substrates in a dry, non-plasma environment. A substrate support in the chemical treatment system is configured to support a plurality of substrates.

Substrate support for high throughput chemical treatment system

A heater assembly configured to elevate a temperature of a processing element in a chemical treatment system is described. The heater assembly may be configured to uniformly heat a large area processing element, such as a processing element that spans a plurality of substrates. Additionally, for example, the heater assembly may be configured to elevate a temperature of an upper assembly, a gas injection assembly, a substrate holder, a chamber wall, or any combination of two or more thereof.

Heater assembly for high throughput chemical treatment system

A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is thermally insulated from the chemical treatment chamber. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate.

Processing system and method for chemically treating a substrate

A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

Growing community of inventors

Danvers, MA, United States of America

Jay R Wallace