Asml Netherlands B.v.

Hermes Microvision Inc.

Jay Jianhui Chen

Hans Van Der Laan

Jen-Shiang Wang

Grzegorz Grzela

Alberto Da Costa Assafrao

Chien-Hung Tseng

Adam Jan Urbanczyk

Yen-Wen Lu

Youping Zhang

Boris Menchtchikov

Te-Chih Huang

Juying Dou

Kenichi Kanai

Yi Xiang Wang

Zheng Fan

Chi-Hsiang Fan

Wei Liu

Jun Jiang

Danying Li

Abdalmohsen Elmalk

Qingyu Meng

Kui-Jun Huang

A method for determining a stack configuration for a substrate subjected to a patterning process. The method includes obtaining (i) measurement data of a stack configuration with location information on a printed substrate, (ii) a substrate model configured to predict a stack characteristic based on a location of the substrate, and (iii) a stack map including a plurality of stack configurations based on the substrate model. The method iteratively determines values of model parameters of the substrate model based on a fitting between the measurement data and the plurality of stack configurations of the stack map, and predicts an optimum stack configuration at a particular location based on the substrate model using the values of the model parameters.

Method for determining stack configuration of substrate

A method including: obtaining a relationship between a performance indicator of a substrate measurement recipe and a parameter of the substrate measurement recipe; deriving a range of the parameter from the relationship, wherein absolute values of the performance indicator satisfy a first condition or a magnitude of variation of the performance indicator satisfies a second condition, when the first parameter is in the range; selecting a substrate measurement recipe that has the parameter in the range; and inspecting a substrate with the selected substrate measurement recipe.

Selection of substrate measurement recipes

Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: obtaining measured target response sequence data relating to a measurement response of a target formed on a substrate by a lithographic process to measurement radiation comprising multiple measurement profiles, wherein the measured target response sequence data describes a variation of the measurement response of the target in response to variations of the measurement profiles; obtaining reference target response sequence data relating to a measurement response of the target as designed to the measurement radiation, wherein the reference target response sequence data describes an optimal measurement response of the target in response to designed measurement profiles without un-designed variation; comparing the measured target response sequence data and the reference target response sequence data; and determining values for variations in stack parameters of the target from the measured target response sequence data based on the comparison.

Metrology method and apparatus and associated computer product

Disclosed is a process monitoring method, and an associated metrology apparatus. The method comprises: comparing measured target response spectral sequence data relating to the measurement response of actual targets to equivalent reference target response sequence data relating to a measurement response of the targets as designed; and performing a process monitoring action based on the comparison of said measured target response sequence data and reference target response sequence data. The method may also comprise determining stack parameters from the measured target response spectral sequence data and reference target response spectral sequence data.

A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.

Metrology method and apparatus

An apparatus for increasing electric conductivity to a wafer substrate, when exposed to electron beam irradiation, is disclosed. More specifically, a methodology to breakdown the insulating layer on wafer backside is provided to significantly reduce the damage on the wafer backside while proceeding with the grounding process.

Wafer grounding methodology

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Fremont, CA, United States of America

Jay Jianhui Chen