Watkins- Johnson Company

Silicon Valley Group, Thermal Systems Llp

Wj Semiconductor Equipment Group, Inc.

Jay Brian DeDontney

Lawrence Duane Bartholomew

Nicholas M Gralenski

Christopher A Peabody

Adam Q Miller

George D Kamian

Gregory M McDaniel

Kenneth M Provancha

A protective shield and a semiconductor processing system including a protective shield is provided. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base having a continuous unit frame, a perforated sheet carried by said continuous frame, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer modules isolating the processing chambers from the rest of the process path all enclosed within a muffle, a protective shield mounted in the processing chambers includes injector shield bodies positioned adjacent the injector and shunt shield bodies spaced from the injector shield bodies, an inlet port between the injector shield bodies, and an outlet port between the shunt shield bodies for the flow of reagents through the protective shield. The shunt shield bodies each include a plenum filled with an inert gas and a bottom outlet port coupled to the plenum for delivering a supply of inert gas below the protective shield to form buffer barriers on opposite sides of the injection ports. The shield body captures the perforated sheets and shield bodies such that the sheets and shield body base can freely expand and contract relative to each other and the end walls under varying temperature conditions, maintaining the precise chamber geometry control required for CVD processing. The buffer modules are connected to a common by-pass exhaust which is independent from the system. The processing chambers are connected to a common chamber exhaust plenum which is separate from the by-pass exhaust. Such separate exhaust paths allow for separate control of each and for the substantially constant flow of gases within the system.

Free floating shield and semiconductor processing system

A protective shield and a semiconductor processing system including a protective shield is provided. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base having a continuous unit frame, a perforated sheet carried by said continuous frame, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer modules isolating the processing chambers from the rest of the process path all enclosed within a muffle. a protective shield mounted in the processing chambers includes injector shield bodies positioned adjacent the injector and shunt shield bodies spaced from the injector shield bodies, an inlet port between the injector shield bodies, and an outlet port between the shunt shield bodies for the flow of reagents through the protective shield. The shunt shield bodies each include a plenum filled with an inert gas and a bottom outlet port coupled to the plenum for delivering a supply of inert gas below the protective shield to form buffer barriers on opposite sides of the injection ports. The shield body captures the perforated sheets and shield bodies such that the sheets and shield body base can freely expand and contract relative to each other and the end walls under varying temperature conditions, maintaining the precise chamber geometry control required for CVD processing. The buffer modules are connected to a common by-pass exhaust which is independent from the system. The processing chambers are connected to a common chamber exhaust plenum which is separate from the by-pass exhaust. Such separate exhaust paths allow for separate control of each and for the substantially constant flow of gases within the system.

A method of manufacturing an injector for chemical vapor deposition (CVD) processing is provided. The method comprises the steps of selecting an elongated member of solid material having first and second ends and a gas delivery surface. At least one elongated passage for receiving a gas is formed in the elongated member and extending between the ends. At least one elongated distribution channel is formed by wire electrode discharge machining (EDM) extending from the elongated passage to the gas delivery surface for providing gas to the gas delivery surface.

Method of manufacturing an injector for chemical vapor deposition

A protective shield and an atmospheric pressure chemical vapor deposition system including a protective shield. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base, a perforated sheet carried by the base, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet. The chemical vapor deposition system includes a plurality of processing chambers, a conveyor for transporting substrates through the processing chambers, buffer chambers isolating the processing chambers from the rest of the process path all enclosed within a muffle. A protective shield mounted in the processing chambers includes injector shield bodies positioned adjacent the injector and shunt shield bodies spaced from the injector shield bodies, an inlet port between the injector shield bodies, and an outlet port between the shunt shield bodies for the flow of reagents through the protective shield. The shunt shield bodies each include a plenum filled with an inert gas and a bottom outlet port coupled to the plenum for delivering a supply of inert gas below the protective shield to form buffer barriers on opposite sides of the injection ports. The shield body captures the perforated sheets and shield bodies such that the sheets and shield body base can freely expand and contract relative to each other and the end walls under varying temperature conditions, maintaining the precise chamber geometry control required for CVD processing.

Free floating shield

A single body injector for delivering gases to a surface. The injector includes a single elongated block with one or more passages formed in the block and communicating with a gas delivery surface via thin channels which extend between the passages and the gas delivery surface. Metering tubes may be placed in the passages to control the profile of the gases delivered.

Single body injector and method for delivering gases to a surface

What is disclosed is an injector of the type commonly used in atmospheric pressure chemical vapor deposition equipment. The injector includes a number of plates with a number of linear hole arrays. The plates are layered in order to produce a number of cascaded holes arrays. The layered plates define a hole matrix. A chute is positioned beneath the hole matrix. On both sides of the chute is a cooling plate. The chute includes a passage, the regions between the cooling plate and the chute form ducts. The top of the hole matrix receives a number of gases and discretely conveys them to the top of the individual cascaded hole arrays. The gaseous chemicals are then forced through the cascaded hole arrays which induces the gases to flow in an increasingly uniform manner. The gases are then individually fed to the passage and ducts which convey them to a region above the surface where the gases are exposed to one another, react and form a layer on the surface.

Growing community of inventors

Santa Cruz, CA, United States of America

Jay Brian DeDontney