Solexel, Inc.

Trutag Technologies, Inc.

Ob Realty, LLC

Jay Ashjaee

Mehrdad M Moslehi

Karl-Josef Kramer

Takao Yonehara

George D Kamian

Subramanian Tamilmani

Pawan Kapur

Yasuyoshi Miyaji

Noriyuki Hayashi

Takamitsu Inahara

David Xuan-Qi Wang

Somnath S Nag

Sean M Seutter

Anthony Calcaterra

David Mordo

David Dutton

Homi Fatemi

Yasuhiro Miyaji

Tokuyuki Hayashi

This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Apparatus and methods for uniformly forming porous semiconductor on a substrate

This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

High-throughput batch porous silicon manufacturing equipment design and processing methods

High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space

An apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates in a batch electrochemical anodic etch process is provided. The apparatus comprises a plurality of edge-sealing template mounts operable to prevent formation of porous silicon at the edges of a plurality of templates. An electrolyte is disposed among the plurality of templates. The apparatus further comprises a power supply operable to switch polarity, change current intensity, and control etching time to produce the porous silicon layers.

Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates

Processing equipment for the metallization of a plurality of semiconductor workpieces. A controlled atmospheric non-oxidizing gas region comprises at least two enclosed deposition zones, the controlled atmospheric non-oxidizing gas region is isolated from external oxidizing ambient. A temperature controller adjusts the temperature of the semiconductor workpiece in each of the at least two enclosed deposition zones. Each of the enclosed deposition zones comprising at least one spray gun for the metallization of the semiconductor workpiece. A transport system moves the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. A batch carrier plate carries the semiconductor workpiece through the controlled atmospheric non-oxidizing gas region. The controlled atmospheric non-oxidizing gas region further comprises a gas-based pre-cleaning zone.

High productivity spray processing for the metallization of semiconductor  workpieces

High-Throughput batch porous silicon manufacturing equipment design and processing methods

This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing

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Cupertino, CA, United States of America

Jay Ashjaee