Motorola Corporation

Freescale Semiconductor,inc.

Jay A Curless

Zhiyi Jimmy Yu

Jamal Ramdani

William J Ooms

Ravindranath Droopad

Jerald A Hallmark

Jun J Wang

Yong Liang

Corey D Overgaard

Bich-Yen Nguyen

Alexander A Demkov

Alexandra Navrotsky

Zhiyi Yi

Sergey Ushakov

Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnO, where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.

Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof

Methods are provided for fabricating semiconductor structures and semiconductor device structures utilizing epitaxial HfSilayers. A process in accordance with one embodiment of the invention begins by disposing a silicon substrate in a processing chamber. The pressure within the processing chamber and a temperature of the silicon substrate in the range of approximately 250&#xb0; C. to approximately 700&#xb0; C. is established. A layer of HfSithen is grown overlying the silicon substrate at a rate in the range of about one (1) to about five (5) monolayers per minute.

Methods of fabricating semiconductor structures comprising epitaxial Hf3Si2 layers

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer has a lattice registry to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The layers of the semiconductor structure may be manufactured in such a way as to control the formation of anti-phase domains so that the structure may operate without the deleterious effects associated with such defects. Such manufacture may include heat treating the substrate to essentially or completely eliminate single steps (anti-phase domains) by forming double steps that can transfer to the oxide interface layer and suppress the formation of anti-phase domains by forming double step therein, in preference to single steps.

Method and apparatus for controlling anti-phase domains in semiconductor structures and devices

A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (,) having a surface (,); forming on the surface of the silicon substrate an interface (,) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (,) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO,, where X is a metal.

Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon

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Tempe, AZ, United States of America

Jay A Curless