Intel Corporation

Tahoe Research, Ltd.

Javier A Falcon

Adel A Elsherbini

Shawna M Liff

Yoshihiro Tomita

Johanna M Swan

Telesphor Kamgaing

Georgios C Dogiamis

James S Clarke

Vijay K Nair

Eric Jin Li

Roman Caudillo

Joshua Heppner

Henning Braunisch

Krishna Bharath

Javier Soto Gonzalez

Ye Seul Nam

Jeanette M Roberts

Hubert C George

David J Michalak

Lester Lampert

Michael J Baker

Albert S Lopez

Joe R Saucedo

Tomita Yoshihiro

Serge Roux

Preston T Meyers

Embodiments of the invention include molded modules and methods for forming molded modules. According to an embodiment the molded modules may be integrated into an electrical package. Electrical packages according to embodiments of the invention may include a die with a redistribution layer formed on at least one surface. The molded module may be mounted to the die. According to an embodiment, the molded module may include a mold layer and a plurality of components encapsulated within the mold layer. Terminals from each of the components may be substantially coplanar with a surface of the mold layer in order to allow the terminals to be electrically coupled to the redistribution layer on the die. Additional embodiments of the invention may include one or more through mold vias formed in the mold layer to provide power delivery and/or one or more faraday cages around components.

Ultra small molded module integrated with die by module-on-wafer assembly

Various embodiments disclosed relate to a semiconductor package. The present semiconductor package includes a substrate. The substrate is formed from alternating conducting layers and dielectric layers. A first active electronic component is disposed on an external surface of the substrate, and a second active electronic component is at least partially embedded within the substrate. A first interconnect region is formed from a plurality of interconnects between the first active electronic component and the second active electronic component. Between the first active electronic component and the substrate a second interconnect region is formed from a plurality of interconnects. Additionally, a third interconnect region is formed from a plurality of interconnects between the second active electronic component and the substrate.

Semiconductor packaging with high density interconnects

Embodiments of the invention include a microelectronic device that includes a first die formed with a silicon based substrate and a second die coupled to the first die. The second die is formed with compound semiconductor materials in a different substrate (e.g., compound semiconductor substrate, group III-V substrate). An antenna unit is coupled to the second die. The antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.

Microelectronic devices with high frequency communication modules having compound semiconductor devices integrated on a package fabric

Embodiments of the invention include a microelectronic device that includes a first silicon based substrate having compound semiconductor components. The microelectronic device also includes a second substrate coupled to the first substrate. The second substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.

Microelectronic devices designed with compound semiconductor devices and integrated on an inter die fabric

A device package has substrates disposed on top of one another to form a stack, and pads formed on at least one of the top surface and the bottom surface of each of the substrates. The device package has interconnects electrically coupling at least one of the top surface and the bottom surface of each substrate to at least one of the top surface and the bottom surface of another substrate. The device package has pillars disposed between at least one of the top surface and the bottom surface of one or more substrates to at least one of the top surface and the bottom surface of other substrates. The device package also has adhesive layers formed between at least one of the top surface and the bottom surface of one or more substrates to at least one of the top surface and the bottom surface of other substrates.

TSV-less die stacking using plated pillars/through mold interconnect

One aspect of the present disclosure provides a quantum circuit assembly that includes a substrate with one or more qubit devices, and at least one demultiplexer included in a single chip with the qubit device(s). The demultiplexer is configured to receive a combined signal from external electronics, the combined signal including a combination of a plurality of signals in different frequency ranges, and to demultiplex said plurality of signals within the combined signal. The demultiplexer is further configured to apply different demultiplexed signals to different lines of a single qubit device, or/and to different qubit devices. Providing such demultiplexers on-chip with the qubit devices advantageously allows reducing the number of input/output lines coupling the chip with qubit devices and the external electronics.

Quantum circuit assemblies with on-chip demultiplexers

Quantum computing assemblies with through-hole dies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a package substrate, a quantum processing die, and a through-hole die between the package substrate and the quantum processing die, wherein the quantum processing die is electrically coupled to the package substrate by interconnects extending through through-holes of the through-hole die.

Quantum computing assemblies with through-hole dies

Embodiments of the invention include a microelectronic device that includes a first die having a silicon based substrate and a second die coupled to the first die. In one example, the second die is formed with compound semiconductor materials. The microelectronic device includes a substrate that is coupled to the first die with a plurality of electrical connections. The substrate including an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.

Microelectronic devices designed with high frequency communication devices including compound semiconductor devices integrated on a die fabric on package

An exemplary superconducting qubit device package includes a qubit die housing a superconducting qubit device that includes at least one resonator, and a package substrate, each having a first face and an opposing second face. The resonator is disposed on the first face of the qubit die. The first face of the qubit die faces and is attached to the second face of the package substrate by first level interconnects. The second face of the package substrate includes a superconductor facing at least portions of the resonator. Such a package architecture may advantageously allow reducing design complexity and undesired coupling, enable inclusion of larger numbers of qubit devices in the qubit die of the package, reduce potential negative impact of the materials used in the package substrate on resonator performance, and limit some sources of qubit decoherence.

Package substrates with top superconductor layers for qubit devices

Quantum computing assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a quantum computing assembly may include a plurality of dies electrically coupled to a package substrate, and lateral interconnects between different dies of the plurality of dies, wherein the lateral interconnects include a superconductor, and at least one of the dies of the plurality of dies includes quantum processing circuitry.

Quantum computing assemblies

Disclosed herein are shielded interconnects, as well as related methods, assemblies, and devices. In some embodiments, a shielded interconnect may be included in a quantum computing (QC) assembly. For example, a QC assembly may include a quantum processing die; a control die; and a flexible interconnect electrically coupling the quantum processing die and the control die, wherein the flexible interconnect includes a plurality of transmission lines and a shield structure to mitigate cross-talk between the transmission lines.

Shielded interconnects

Embodiments of the present disclosure describe novel qubit device packages, as well as related computing devices and methods. In one embodiment, an exemplary qubit device package includes a qubit die and a package substrate, where the qubit die is coupled to the package substrate using one or more preforms. In particular, a single preform may advantageously be used to replace a plurality of individual contacts, e.g. a plurality of individual solder bumps, electrically coupling the qubit die to the package substrate. Such packages may reduce design complexity and undesired coupling, and enable inclusion of larger numbers of qubits in a single qubit die.

Growing community of inventors

Chandler, AZ, United States of America

Javier A Falcon