Semiconductor Components Industries, LLC

Jaume Roig-Guitart

Peter Moens

Piet Vanmeerbeek

Johan Camiel Julia Janssens

Marnix Tack

Aurore Constant

Filip Bauwens

Herbert De Vleeschouwer

Frederick Johan G Declercq

Ana Villamor

Filip Bogman

Gordon M Grivna

Prasad Venkatraman

Zia Hossain

Balaji Padmanabhan

Andrei Konstantinov

Olivier Trescases

Woochul Jeon

Thomas Neyer

Martin Domeij

Fredrik Allerstam

Pierre Gassot

Aarnout Wieers

Chin Foong Tong

Jangkwon Lim

Teddy Bonnin

Mohammad Shawkat Zaman

In an embodiment, a HEMT is formed to have a main transistor having a main active area and a sense transistor having a sense active area. An embodiment may include that the main active area is isolated from the sense active area.

High electron mobility transistor

In a general aspect, a semiconductor device can include a substrate of a first conductivity type, an active region disposed in the substrate, and a termination region disposed in the substrate adjacent to the active region. The termination region can include a junction termination extension (JTE) of a second conductivity type, where the second conductivity type is opposite the first conductivity type. The JTE can have a first depletion stopper region disposed in an upper portion of the JTE, a second depletion stopper region disposed in a lower portion of the JTE, and a high carrier mobility region disposed between the first depletion stopper region and the second depletion stopper region.

Termination structures with reduced dynamic output capacitance loss

An electronic device can include a drain terminal, a control terminal, and a source terminal, a first HEMT, and a second HEMT. The first HEMT can include a drain electrode coupled to the drain terminal, a gate electrode coupled to the first control terminal, and a source electrode coupled to the source terminal. The second HEMT can include a drain electrode, a gate electrode, and a source electrode. The drain electrode can be coupled to the drain terminal, and the source electrode can be coupled to the source terminal. In an embodiment, a resistor can be coupled between the gate and source electrodes of the second HEMT, and in another embodiment, the gate electrode of the second HEMT can electrically float. During or after a triggering event, the second HEMT can turn on temporarily to divert some of the charging from the triggering event into the second HEMT.

Electronic device including high electron mobility transistors and a resistor and a method of using the same

An embodiment of a method of forming a programming element using a III/V semiconductor material may include forming one or more recesses in a first portion of a gate material and forming a first conductor on the one or more recesses. In an embodiment, the method may include configuring a programming circuit to form a voltage across the one or more recesses that is greater than a breakdown voltage of the gate material underlying the one or more recesses.

Semiconductor device having a programming element

A semiconductor transistor device includes a GaN transistor including a drain, a gate, and a source, the GaN transistor having a driving voltage applied across the gate and the source and configured to switch between an on-voltage associated with an on-state of the GaN transistor and an off-voltage associated with an off-state of the GaN transistor. The semiconductor transistor device further includes a variable gate-source resistor connected between the gate and the source and having a variable resistance that varies in response to changes in the driving voltage when switching between the on-state and the off-state of the GaN transistor.

Variable resistance to reduce gate votlage oscillations in gallium nitride transistors

In one embodiment, a driver circuit is configured to form a Vgs of a transistor as a negative value during a time interval that a second transistor, connected to the first transistor, is being enabled.

Method of forming a semiconductor device and circuit therefor

A circuit can comprise a transistor, a sensor, and a switch. The transistor can include a drain electrode, a gate electrode, a source electrode, and a back electrode. The sensor can be configured to detect an error condition in the transistor. The switch can be configured to change a voltage at the back electrode in response to the sensor detecting the error condition in the transistor, the change of the voltage at the back electrode reducing current flow between the drain electrode and the source electrode.

Circuit that changes voltage of back electrode of transistor based on error condition

An electronic device can include a source terminal, a gate terminal, and a protection circuit. The protection circuit can include a gate section including a first electrode and a second electrode, wherein the first electrode of the gate section is coupled to the gate terminal; and a source section including a first electrode and a second electrode, wherein the first electrode of the source section is coupled to the source terminal. The protection switch can include a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. The second electrode of the gate section, the second electrode of the source section, and the control electrode of the protection switch can be coupled to one another. In an embodiment, the electronic device can further include an electronic component that is protected by the protection circuit.

Electronic device including a protection circuit

In an aspect, a circuit can include a first HEMT, a second HEMT, and a variable capacitor. A drain of the first HEMT can be coupled to a source of the second HEMT. An electrode of the variable capacitor can be coupled to a source of the first HEMT, and another electrode of the variable capacitor can be coupled to a gate of the second HEMT. In another aspect, an electronic device can include a die including a HEMT and a variable capacitor. An electrode of the variable capacitor can be coupled to a source or a gate of the HEMT, and another electrode of the variable capacitor can be coupled to an external terminal of the die. In a further aspect, an electronic device comprising a die, wherein the die includes a variable capacitor, a first diode, and a second diode.

Electronic device including a transistor and a variable capacitor

An electronic device can include a temperature sensor. The temperature sensor can include a drain electrode including drain fingers spaced apart from the source fingers; a source electrode including source fingers spaced apart from the drain fingers; and a gate electrode including a runner, gate fingers and a conductive bridge. In an embodiment, the runner includes a first portion and a second portion spaced apart from the first portion, the gate fingers are coupled to the runner and each gate finger is disposed between a pair of the source and drain fingers. The conductive bridge connects at least two gate fingers, wherein the conductive bridge is along a conduction path between the first and second portions of the runner. Designs for the temperature sensor may provide a more accurate temperature measurement reflective of a transistor within the electronic device.

Electronic device including a temperature sensor

In an aspect, a circuit can include drain and source terminals; a HEMT having a drain and a source, wherein the drain is coupled to the drain terminal; and a variable resistor having a first electrode and a second electrode. The first electrode can be coupled to the source of the HEMT, and the second electrode can be coupled to the source terminal. In another aspect, an electronic device can include a source terminal; a heterojunction between a channel layer and a barrier layer; a source electrode of a HEMT overlying the channel layer; a first resistor electrode overlying the channel layer and spaced apart from the source electrode, wherein the first resistor electrode is coupled to the source terminal; and a variable resistor, wherein from a top view, the variable resistor is disposed along the heterojunction between the source electrode and the first resistor electrode.

Electronic device and circuit including a transistor and a variable resistor

At least one embodiment is directed to a semiconductor edge termination structure, where the edge termination structure comprises several doped layers and a buffer layer.

Method of forming a semiconductor device termination and structure therefor

A circuit can include a first transistor including a source and a gate; a second transistor including a drain and a gate, wherein the source of the first transistor is coupled to the drain of the second transistor; and a switchable element. In one embodiment, a first current-carrying terminal of the switchable element is coupled to the gate of the first transistor, and a second current-carrying terminal of the switchable element is coupled to the gate of the second transistor. In another embodiment, the switchable element is coupled to the gate of the first transistor and includes a first selectable terminal of the switchable element coupled to a source of the second transistor, and a second selectable terminal of the switchable element coupled to the gate of the second transistor. In a particular embodiment, the circuit can be a cascode circuit.

Circuit with transistors having coupled gates

In at least some embodiments, a semiconductor device structure comprises a first surface comprising a source and a gate; a second surface comprising a drain; a substrate of a first type, wherein the substrate is in contact with the drain; a first column in contact with the substrate and the first surface of the device, the first column comprising a dielectric material; and a mirroring axis, wherein a centerline of the first column is disposed along the mirroring axis, forming a first device side and a second device side, wherein the first device side mirrors the second device side. The first device side comprises a column of a second type in contact with the first column, the substrate, and the first surface of the device; a second column of the first type in contact with the substrate and the second column; a third column of the first type in contact with the substrate and the second column; a first region of the first type disposed in contact with the third column; a second region of the first type disposed in contact with the source and with a third region of the first type; and a first trench comprising the second type and a first region of the second type, wherein the first region of the second type is in contact with a gate region.

High-voltage superjunction field effect transistor

In one embodiment, a semiconductor substrate is provided having a localized superjunction structure extending from a major surface. A doped region is then formed adjacent the localized superjunction structure to create a charge imbalance therein. In one embodiment, the doped region can be an ion implanted region formed within the localized superjunction structure. In another embodiment, the doped region can be an epitaxial layer having a graded dopant profile adjoining the localized superjunction structure. The charge imbalance can improve, among other things, unclamped inductive switching (UIS) performance.

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Oudenaarde, Belgium

Jaume Roig-Guitart