Micron Technology Incorporated

Jaspreet S Ghandi

Yangyang Sun

Don L Yates

Methods of forming a Ni material on a bond pad are disclosed. The methods include forming a dielectric material over a bond pad, forming an opening within the dielectric material to expose the bond pad, curing the dielectric material to form a surface of the dielectric material having a steep curvilinear profile, and forming a nickel material over the at least one bond pad. The dielectric material having a steep curvilinear profile may be formed by altering at least one of a curing process of the dielectric material and a thickness of the dielectric material. The dielectric material may be used to form a relatively thick Ni material on bond pads smaller than about 50 &#x3bc;m. Semiconductor structures formed by such methods are also disclosed.

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Boise, ID, United States of America

Jaspreet S Ghandi