Cree Gmbh

Creeled, Inc.

Boston University

Jasper S Cabalu

Colin Kelly Blakely

Kyle Damborsky

Michael John Bergmann

Peter Scott Andrews

Jesse Colin Reiherzer

Brian Thomas Collins

Theodore D Moustakas

Derek Miller

Aaron James Francis

Jack Vu

John Adam Edmond

Bernd P Keller

David T Emerson

Jeffrey Carl Britt

Robert Wilcox

Ashay Chitnis

Florin A Tudorica

Iliya Todorov

Eric J Tarsa

James Ibbetson

Matthew Donofrio

David Clatterbuck

Arpan Chakraborty

Nathaniel O Cannon

Yankun Fu

Alan Wellford Dillon

James Seruto

Solid-state lighting devices including light-emitting diodes (LEDs), and more particularly packaged LED devices are disclosed. LED packages are disclosed herein with arrangements of LED chips and corresponding lumiphoric regions that are configured to provide overall light emissions having improved color mixing and emission uniformity. LED packages are further disclosed herein that are configured to be tunable between different colors or correlated color temperatures (CCTs) while providing improved color mixing and emission uniformity. Arrangements may include differing lumiphoric regions that are arranged with various alternating patterns including one or more intersecting lines, rows of alternating lumiphoric regions, patterns that alternate in at least two directions, and checkerboard patterns.

Lumiphoric arrangements for light emitting diode packages

Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly packaged LEDs with light-altering materials are disclosed. A light-altering material is provided in particular configurations within an LED package to redirect light from an LED chip within the LED package and contribute to a desired emission pattern of the LED package. The light-altering material may also block light from the LED chip from escaping in a non-desirable direction, such as large or wide angle emissions. The light-altering material may be arranged on a lumiphoric material adjacent to the LED chip in various configurations. The LED package may include an encapsulant on the light-altering material and the lumiphoric material.

Light-emitting diode package with light-altering material

A light emitter device includes a submount with a top surface and a bottom surface, electrically conductive traces on the top surface of the submount, light emitting diodes (LEDs) arranged on the top surface of the submount in light emitter zones, with the LEDs being electrically connected to respective traces of the traces, a retention material disposed over the top surface of the submount in a form of walls which physically separate the light emitter zones, and encapsulants that are dispensed in respective light emitter zones of the light emitter zones. A least a portion of the plurality of walls of the retention material can comprise a translucent material, a reflective material, and/or a light-absorbing material. The LEDs are individually addressable to independently control an output of light from each of the LEDs to produce a specified light output.

Light emitting diodes, components and related methods

A light emitter device includes a submount with a top surface and a bottom surface, electrically conductive traces on the top surface of the submount, light emitting diodes (LEDs) arranged on the top surface of the submount in light emitter zones, with the LEDs being electrically connected to respective traces of the traces, a retention material disposed over the top surface of the submount in a form of walls which physically separate the light emitter zones, and encapsulants that are dispensed in respective light emitter zones of the light emitter zones. The LEDs are individually addressable to independently control an output of light from each of the LEDs to produce a specified light output.

Light emitting diode (LED) components include a submount, at least one or more LED chip wirebonded on a first surface of the submount to electrical traces at the edges of the submount, and a molded encapsulant which is devoid of a curved lens or hemispherical lens and can have outer or lateral walls co-planar with exterior walls of the submount. An LED component can have a viewing angle that is greater than 125&#xb0;. A method of providing an LED component includes providing a substantially flat submount, attaching one or more LED chip over a first surface of the submount, dispensing an encapsulant over the first surface of the submount over the LED chips, applying a press over the encapsulant to apply a heat and/or pressure to the encapsulant, and molding the encapsulant over the first surface of the submount.

Light emitting diode (LED) components and methods

A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent materials that down-convert respective first through fourth portions of the radiation emitted by the LED to radiation having respective first through fourth peak wavelengths. The first peak wavelength is in the green color range and the second through fourth peak wavelengths are in the red color range. The second and third luminescent materials each emit light having a full-width half maximum bandwidth of at least 70 nanometers, while the fourth luminescent material emits light having a full-width half maximum bandwidth of less than 60 nanometers. Embodiments that only include three luminescent materials are also disclosed.

Light-emitting devices having closely-spaced broad-spectrum and narrow-spectrum luminescent materials and related methods

Light emitting devices having closely-spaced broad-spectrum and narrow-spectrum luminescent materials and related methods

Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.

Wafer level phosphor coating method and devices fabricated utilizing method

An LED includes a first pedestal and may be fabricated by coating a first phosphor layer on the LED, thinning the first phosphor layer to expose the first pedestal, forming a second pedestal on the first pedestal, coating a second phosphor layer and thinning the second phosphor layer to expose the second pedestal. Alternatively, an LED having a pedestal is coated with a first phosphor layer, coated with a second phosphor layer and then planarized to expose the pedestal. Related structures are also provided.

Methods of fabricating light emitting devices including multiple sequenced luminophoric layers

A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

Emission tuning methods and devices fabricated utilizing methods

A light emitting device includes an LED and a layer of luminophoric particles, such as phosphor, that are non-homogeneous in size as a function of distance away from the LED. For example, a first layer of relatively large size phosphor particles may be provided between a second layer of relatively small size phosphor particles and the LED. The large particles can provide high brightness and the small particles can reduce angular color temperature variation in emitted light.

Solid state light emitting devices including nonhomogeneous luminophoric particle size layers

Light emitting devices include a solid state lighting source and a recipient luminophoric medium for down-converting at least some of the radiation emitted by the solid state lighting source. The recipient luminophoric medium includes a first material that down-converts the radiation emitted by the solid state lighting source to radiation having a peak wavelength in the green color range that has a full width half maximum emission bandwidth that extends into the cyan color range, and at least one additional material that down-converts the radiation emitted by the solid state lighting source to radiation having a peak wavelength in another color range.

Growing community of inventors

Cary, NC, United States of America

Jasper S Cabalu