Stion Corporation

Jason Todd Jackson

Robert D Wieting

A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a surface region made of a thin-film photovoltaic absorber including copper, indium, gallium, selenium, and sulfur species. Additionally, the method includes applying a dip-in chemical bath deposition process for forming a buffer layer containing at least zinc-ogygen-sulfide material but substantially free of cadmium species. Furthermore, the method includes producing a chemical bath including steps of heating a bath of water to about 75&#xb0; C., adding aqueous ammonia to mix with the bath of water, adding a solution of sodium hydroxide, adding zinc salt solution, and adding a solution of thiourea. The dip-in chemical bath deposition process includes immersing a plurality of substrates formed with the thin-film photovoltaic absorber substantially vertically in the chemical bath for 30 minutes to form the zinc-oxygen-sulfide buffer layer followed by a cleaning and drying process.

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Hattiesburg, MS, United States of America

Jason Todd Jackson